KY2302H

ShenZhen HanKingYuan Electronic Co.,Ltd KY2302H 20V N-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 35mΩ (24mΩ Typ.) @VGS=4.5V ● RDS(ON) ≤ 50mΩ (29mΩ Typ.) @VGS=2.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load Switch for Portable Devices ● DC/DC Converter N-CHANNEL MOSFET MARKING S2 : Device Code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage ID IDM PD Continuous Drain Current Pulsed Drain Current note1 Value Unit 20 ±12 V 4 A 16 Maximum Power Dissipation 0.84 W ℃/W Thermal Resistance from Junction to Ambient(t ≤5s) 150 TJ Junction Temperature 150 Tstg Storage Temperature -55 ~+150 RθJA www.scr-ky.com ℃ 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2302H MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units 20 - - V - - 1 μA - - ±100 nA 0.4 0.7 1.1 V VGS =4.5V, ID =4A - 24 35 On-Resistance note2 VGS =2.5V, ID =3.1A - 29 50 Forward transconductancea VDS=5V，ID=3.6A - 9 - S - 310 - pF - 125 - pF 86 pF nC Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current VGS = 0V,ID = 250μA VDS = 16V, VGS = 0V, TJ = 25℃ VGS = ±12V,VDS = 0V On Characteristics VGS(th) RDS(on) gfs Gate Threshold Voltage Static Drain-Source Dynamic Characteristics VDS =VGS,ID = 250μA mΩ note3 Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =10V, VGS = 0V, f = 1.0MHz VDS=10V, ID=3.6A, VGS=4.5V, - 4 10 - 0.65 - nC - 1.5 - nC - 8 - ns - 57 - ns - 17 - ns - 12 - ns - 0.8 1.3 V Switching Characteristics note3 td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf VGS = 4.5V, VDS=10V, RG =6Ω, ID=3.6A Turn-Off Fall Time Drain-Source Diode Characteristics and Maximum Ratings VGS = 0V, ISD=3A, Drain to Source Diode Forward VSD TJ = 25℃ Voltage Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2 . Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 3 . Guaranteed by design, not subject to production testing www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2302H TYPICAL PERFORMANCE CHARACTERISTICS Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Rdson-Drain Current Figure4. Typical Source-Drain Diode Forward Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.scr-ky.com 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2302H TYPICAL PERFORMANCE CHARACTERISTICS (cont.) Figure8. Normalized on Resistance vs. Temperature Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area Figure10. Drain Current vs. Ambient Temperature Figure11. Transient Thermal Response Curve www.scr-ky.com 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2302H SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.022 REF 0.020 8° 5／5