KY2312

ShenZhen HanKingYuan Electronic Co.,Ltd KY2312 20V N-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 21mΩ (16 mΩ Typ.) @VGS=4.5V ● RDS(ON) ≤ 30mΩ (20 mΩ Typ.) @VGS=2.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Battery Protection ● Load Switch ● Power Management N-CHANNEL MOSFET MARKING 2312 2312: Device Code Other marks: "S12" MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA TJ, TSTG Ta= 25℃ Ta = 100℃ Ta= 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.scr-ky.com 5 3.2 A 20 A 1.25 W 100 ℃/W -55 to +150 ℃ 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2312 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units 20 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID=250μA IDSS Zero Gate Voltage Drain Current VDS =20V, VGS = 0V, - - 1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±10V - - ±100 nA 0.5 0.65 0.9 V On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID= 250μA RDS(on) Static Drain-Source on-Resistance VGS =4.5V, ID =5A - 16 21 note2 VGS =2.5V, ID =4.7A - 20 30 Forward Transconductance VDS =10V, ID = 5A 6 - - S - 865 - pF - 105 - pF - 55 - pF gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS=10V, VGS =0V, f = 1.0MHz Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD =10V, ID =4A, RG = 1Ω, VGEN=5V, Turn-off Fall Time - - 10 ns - - 20 ns - - 32 ns - - 12 ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 5 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 20 A VSD Drain to Source Diode Forward Voltage - 0.75 1.2 V VGS = 0V, IS = 4A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2312 TYPICAL PERFORMANCE CHARACTERISTICS Figure 1. Gate Charge Test Circuit & Waveform Figure 2. Resistive Switching Test Circuit & Waveforms Figure 3. Unclamped Inductive Switching Test Circuit & Waveforms www.scr-ky.com 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd TYPICAL PERFORMANCE CHARACTERISTICS KY2312 Figure 4. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) www.scr-ky.com 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY2312 SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 2.000 0.071 e e1 0.950 TYP 1.800 L 0.037 TYP 0.550 REF 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.020 8° 5／5