KY3407C

ShenZhen HanKingYuan Electronic Co.,Ltd KY3407C -30V P-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 80mΩ( 57mΩ Typ.) @VGS=-10V ● RDS(ON) ≤ 130mΩ( 112mΩ Typ.) @VGS=-4.5V 1. GATE 2. SOURCE 3. DRAIN APPLICATIONS ● Load Switch ● Power Management MARKING P-CHANNEL MOSFET 3407 3407：Device code MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±20 V ID Continuous Drain Current -3.2 A IDM Pulsed Drain Current note1 -12.8 A Ptot Total Power Dissipation 1.25 W Thermal Resistance, Junction to Ambient 100 ℃/W Junction Temperature 150 ℃ -55 to +150 ℃ RθJA TJ TSTG Storage Temperature Range www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407C MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Parameter Symbol bol Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS = 0V,ID = -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V, TJ = 25℃ - - -1 μA IGSS Gate to Body Leakage Current VGS = ±20V,VDS = 0V - - ±100 nA Gate Threshold Voltage VDS =VGS,ID = -250μA -1.0 -1.86 -2.5 V Static Drain-Source VGS =-10V, ID =-3A - 57 80 mΩ VGS =-4.5V, ID =-2A - 112 130 - 480 - pF - 79 60 - pF - pF - - nC - 5.5 0.82 - nC - 1.08 - nC - 11.5 - ns - 50.1 - ns - 15.6 - ns - 8.2 - ns - - -1.2 V On Characteristics VGS(th) RDS(on) On-Resistance note2 Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS =-15V, VGS = 0V f = 1.0MHz VDS=-15V, ID=-2A, VGS=-10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VGS = -10V, VDS=-15V RG =2.5Ω, ID=-1A RL =15Ω, Drain-Source Diode Characteristics and Maximum Ratings Drain to Source Diode Forward VGS = 0V, ISD=-3A VSD Voltage TJ = 25℃ Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2 . Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd Typical Performance Characteristics Figure1. Output Characteristics KY3407C Figure2. Transfer Characteristics Figure3. Rdson-Drain Current Figure4. Typical Source-Drain Diode Forward Voltage Figure5. Capacitance Characteristics Figure6. Gate Charge www.scr-ky.com 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd Typical Performance Characteristics (cont.) Figure8. Normalized on Resistance vs. Temperature Figure7. Normalized Breakdown Voltage vs. Temperature Figure9. Safe Operation Area KY3407C Figure10. Drain Current vs. Ambient Temperature Figure11. Transient Thermal Response Curve www.scr-ky.com 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3407C SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 0.100 e e1 0.950 TYP 1.800 L 0.037 TYP 2.000 0.071 0.550 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.079 0.022 REF 0.020 8° 5／5