KY3401

ShenZhen HanKingYuan Electronic Co.,Ltd KY3401 -30V P-Channel Mosfet SOT-23 FEATURES ● RDS(ON) ≤ 55mΩ( 45mΩ Typ.) @VGS=-10V ● RDS(ON) ≤ 68mΩ( 53mΩ Typ.) @VGS=-4.5V 1. GATE ● RDS(ON) ≤ 96mΩ( 72mΩ Typ.) @VGS=-2.5V 3. DRAIN 2. SOURCE APPLICATIONS ● PWM Applications ● Load Switch P-CHANNEL MOSFET ● Power Management MARKING Other marks: "R1" or "A19T" MAXIMUM RATINGS (Ta=25°C unless otherwise noted) Symbol Parameter Max. Units VDSS Drain-Source Voltage -30 V VGSS Gate-Source Voltage ±12 V Ta = 25℃ -4.2 A Ta = 100℃ -2.7 A -30 A 1.5 W 83 ℃/W -55 to +150 ℃ ID Continuous Drain Current IDM Pulsed Drain Current PD Power Dissipation RθJA TJ, TSTG note1 Ta = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.scr-ky.com 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3401 MOSFET ELECTRICAL CHARACTERISTICS Ta=25 °C unless otherwise specified Symbol Parameter Test Condition Min. Typ. Max. Units Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V, ID= -250μA -30 - - V IDSS Zero Gate Voltage Drain Current VDS = -30V, VGS = 0V - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±12V - - ±100 nA VDS= VGS, ID=-250μA VGS =-10V, ID =-4A -0.6 - -0.9 -1.3 V 45 55 VGS =-4.5V, ID =-3A - 53 68 VGS =-2.5V, ID =-1A - 72 96 - 880 - pF - 105 65 - pF pF - 8.5 1.8 - nC nC - 2.7 - nC - 7 - ns - 3 - ns - 20 12 - ns ns On Characteristics VGS(th) Gate Threshold Voltage RDS(on) Static Drain-Source on-Resistance note2 mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Reverse Transfer Capacitance Crss Qg Qgs Total Gate Charge Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = -15V, VGS = 0V f = 1.0MHz VDS= -15V, ID = -4.2A VGS = -10V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time Turn-off Fall Time tf VDD = -15V, ID = -1A, VGS=-10V,RGEN=2.5Ω Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -4.2 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -30 A VSD Drain to Source Diode Forward Voltage - -0.8 -1.2 V VGS = 0V, IS = -4.2A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3401 TYPICAL PERFORMANCE CHARACTERISTICS Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics -ID (A) 25 25 VGS=10 thru 6V TA=-55℃ 4.5V 20 -ID (A) 20 25℃ 15 15 125℃ 2.5V 10 10 5 5 1.5V -VGS(V) -VDS(V) 0 0 2 4 6 8 10 Figure 3:On-resistance vs. Drain Current 100 0 0.5 10 VGS=-2.5V 60 VGS=-4.5V 1.5 2.0 2.5 Figure 4: Body Diode Characteristics RDS(ON) (mΩ) 80 1.0 -IS(A) TJ=150℃ 40 TJ=-50℃ TJ=-25℃ 1 VGS=-10V 20 -ID(A) 0 0 1 2 3 4 5 Figure 5: Gate Charge Characteristics 0.1 0.0 0.4 VSD(V) 0.6 0.8 1.0 1.2 1.4 Figure 6: Capacitance Characteristics -VGS(V) 10 0.2 C(pF) VDS=-15V ID=-4.2A 8 Ciss 103 6 4 Coss 102 Crss 2 0 0 Qg(nC) 2 www.scr-ky.com 4 6 8 10 101 0 -VDS(V) 5 10 15 20 25 30 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3401 TYPICAL PERFORMANCE CHARACTERISTICS (cont.) Figure 7: Normalized Breakdown Voltage vs. Junction Temperature V BR(DSS)(V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area 0.5 -100 Tj (℃) -50 0 50 100 150 200 Figure 10: Maximum Continuous Drain Current vs. Case Temperature -ID(A ) 5 100 -ID(A ) 4 10 10μs 3 100μs 1 2 Limited by R DS(on) 1ms TC=25℃ Single pulse 0.1 0.1 1 1 DC -V DS (V) 10 0 100 0 25 50 TA (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 102 ZthJ-A(℃ /W) 100 D=0.5 D=0.2 D=0.1 D=0.05 D=0.02 D=0.01 Single pulse 10-1 10-2 -4 10 10-3 10-2 www.scr-ky.com TP(s) 10-1 PDM 101 t1 t2 Notes: 1.Duty factor D=t1/t2 2.Peak T J=P DM*Z thJA+T A 100 101 102 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3401 SOT-23 PACKAGE OUTLINE DRAWING Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 0.900 1.150 0.035 0.045 A1 0.000 0.100 0.000 0.004 A2 0.900 1.050 0.035 0.041 b 0.300 0.500 0.012 0.020 c 0.080 0.150 0.003 0.006 D 2.800 3.000 0.110 0.118 E 1.200 1.400 0.047 0.055 E1 2.250 2.550 0.089 e e1 0.950 TYP 1.800 L 2.000 0.071 0.550 REF 0.079 0.022 REF L1 0.300 0.500 0.012 θ 0° 8° 0° www.scr-ky.com 0.100 0.037 TYP 0.020 8° 5／5