KY3415B

ShenZhen HanKingYuan Electronic Co.,Ltd KY3415B -20V P-Channel Mosfet FEATURES SOT-23 ● RDS(ON) ≤ 45mΩ (38mΩ Typ.) @VGS=-4.5V ● RDS(ON) ≤ 60mΩ (48mΩ Typ.) @VGS=-2.5V 1. GATE 2. SOURCE ● ESD Rating: HBM 2.0KV 3. DRAIN APPLICATIONS ● PWM Applications P-CHANNEL MOSFET ● Load Switch ● Power Management MARKING 16 Other marks: "3415" or "AF4E " Absolute Maximum Ratings (TC=25℃ unless otherwise specified) Symbol Parameter Max. Units VDSS Drain-Source Voltage -20 V VGSS Gate-Source Voltage ±10 V ID Continuous Drain Current IDM Pulsed Drain Current note1 PD Power Dissipation RθJA TJ, TSTG TC = 25℃ -4 TC = 100℃ -2.6 TA = 25℃ Thermal Resistance, Junction to Ambient Operating and Storage Temperature Range www.scr-ky.com A -20 A 1.67 W 75 ℃/W -55 to +150 ℃ 1／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3415B Electrical Characteristics (TC=25℃ unless otherwise specified) Symbol Parameter Test Condition Min. Typ. Max. Units -20 - - V Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage VGS=0V,ID= -250μA IDSS Zero Gate Voltage Drain Current VDS = -20V, VGS = 0V, - - -1 μA IGSS Gate to Body Leakage Current VDS =0V, VGS = ±8V - - ±10 μA -0.4 - -1.0 V On Characteristics VGS(th) Gate Threshold Voltage VDS= VGS, ID= -250μA RDS(on) Static Drain-Source on-Resistance VGS =-4.5V, ID =-4A - 38 45 note2 VGS =-2.5V, ID =-3A - 48 60 Forward Transconductance VDS =-5V, ID = -4A 8 - - S - 950 - pF - 165 - pF - 120 - pF - 12 - nC - 1.4 1. nC - 3.6 3. nC - 12 - ns - 10 - ns - 19 - ns - 25 - ns gFS mΩ Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = -10V, VGS = 0V, f = 1.0MHz VDS = -10V, ID = -4A, VGS = -4.5V Switching Characteristics td(on) Turn-on Delay Time tr Turn-on Rise Time td(off) Turn-off Delay Time tf VDD=-10V, VGS=-4.5A, RL=2.5Ω,RGEN=3Ω Turn-off Fall Time Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - -4 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - -20 A VSD Drain to Source Diode Forward Voltage - - -1.2 V VGS = 0V, IS = -4A Notes:1. Repetitive Rating: Pulse Width Limited by Maximum Junction Temperature 2. Pulse Test: Pulse Width≤300μs, Duty Cycle≤2% www.scr-ky.com 2／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3415B Typical Performance Characteristics Figure 2: Typical Transfer Characteristics Figure1: Output Characteristics 40 -ID (A) -8V 35 -ID (A) 15 -4.5V -3.0V 30 12 -2.5V TJ=125℃ 25 9 20 -2.0V 15 6 TJ=25℃ 10 3 VGS=-1.5V 5 -VDS(V) 0 0 1 2 3 4 5 0 -VGS(V) 0 RDS(ON) (mΩ) 1.0E+00 VGS=-4.5V 35 1.0E-01 30 VGS=-10V 25 TJ=125℃ 1.0E-02 20 TJ=25℃ 1.0E-03 15 10 5 0 0 1.0E-04 -ID(A) 1 2 3 4 5 6 7 8 1.0E-05 0.0 Figure 5: Gate Charge Characteristics 4.5 3.6 2.0 1.5 -IS(A) 1.0E+01 40 1.0 Figure 4: Body Diode Characteristics Figure 3:On-resistance vs. Drain Current 50 45 0.5 0.2 0.4 -VSD(V) 0.6 0.8 1.0 1.2 Figure 6: Capacitance Characteristics -VGS(V) 104 VDS=-10V ID=-5A C(pF) Ciss 103 2.7 1.8 102 Coss Crss 0.9 0 0 Qg(nC) 2 4 www.scr-ky.com 6 8 10 12 14 101 0 -VDS(V) 5 10 15 20 3／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3415B Typical Performance Characteristics (cont.) Figure 7: Normalized Breakdown Voltage vs. Junction Temperature VBR(DSS)(V) 1.3 Figure 8: Normalized on Resistance vs. Junction Temperature RDS(on)(mΩ) 2.5 1.2 2.0 1.1 1.5 1.0 1.0 0.9 Tj (℃) 0 -100 -50 0 50 100 150 200 Figure 9: Maximum Safe Operating Area -ID(A) 0.5 -100 100μs 100ms 200 -ID(A) 3 DC 2 TC=25℃ Single pulse 1 150 4 10ms 0.1 0.1 100 5 1ms 1 50 6 10μs 10 0 Figure 10: Maximum Continuous Drain Current vs. Case Temperature 7 Limited by RDS(on) Tj (℃) -50 1 -VDS (V) 10 0 100 0 25 50 Tc (℃) 75 100 125 150 Figure.11: Maximum Effective Transient Thermal Impedance, Junction-to-Ambient (SOT-23) 102 ZthJ-C(℃/W) 101 D=0.5 t1 D=0.2 D=0.1 t2 D=0.05 D=0.02 D=0.01 Notes: Single pulse 1.Duty factor D=t1/t2 2.Peak TJ=PDM*ZthJC+TC TP(s) PDM 100 10-1 10-2 -4 10 10-3 10-2 www.scr-ky.com 10-1 100 101 102 4／5 ShenZhen HanKingYuan Electronic Co.,Ltd KY3415B SOT-23 PACKAGE OUTLINE DRAWING H G E A I F C B D Dimensions Ref. Millimeters Inches Min. Typ. Max. Min. Typ. Max. A 2.30 2.40 2.50 0.091 0.095 0.098 B 2.80 2.90 3.00 0.110 0.114 0.118 1.90 REF C 0.075 REF D 0.35 0.40 0.45 0.014 0.016 0.018 E 1.20 1.30 1.40 0.047 0.051 0.055 F 0.90 1.00 1.10 0.035 0.039 0.043 0.10 0.15 0.004 0.006 G H 0.20 I 0 www.scr-ky.com 0.008 0.10 0 0.004 5／5