NP2N10VR
100V N-Channel Enhancement Mode MOSFET
Description
Schematic diagram
The NP2N10VR uses advanced trench technology
to provide excellent RDS(ON), low gate charge and high
density cell Design for ultra low on-resistance. This
device is suitable for use as a load switch or in PWM
applications.
D
G
General Features
S
VDS =100V,ID =2A
RDS(ON)(Typ.)=200mΩ
@VGS=10V
RDS(ON)(Typ.)=220mΩ
@VGS=4.5V
High power and current handing capability
Lead free product is acquired
Surface mount package
Marking and pin assignment
SOT23
(TOP VIEW)
D
3
Application
NP102
PWM applications
Load switch
Package
1
2
G
S
HF Pb
SOT23
Ordering Information
Part Number
Storage Temperature
Package
Devices Per Reel
NP2N10VR-G
-55°C to +150°C
SOT-23-3L
3000
Absolute Maximum Ratings (TA=25℃ unless otherwise noted)
parameter
symbol
limit
unit
Drain-source voltage
VDS
100
V
Gate-source voltage
VGS
±20
V
TC=25°C
TC=70°C
Continuous Drain Current (TJ = 150 °C)
TA=25°C
2
ID
TC=25°C
TA=25°C
Pulsed Drain Current (t = 300 µs)
Rev.1.1 —Jan.8.2018
IS
IDM
1
1.6b,c
1.3b,c
TA=70°C
Continuous Source-Drain Diode Current
1.7
A
2.1
1b,c
5
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NP2N10VR
TC=25°C
2.5
TC=70°C
Maximum power dissipation
1.6
PD
TA=25°C
W
1.25b,c
0.8b,c
TA=70°C
TJ,TSTG
-55—150
℃
Symbol
Typical
Maximum
Unit
t5s
RθJA
100
130
Steady State
RθJF
60
75
Operating Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient
b, d
Maximum Junction-to-Foot (Drain)
℃/W
Notes:
a:TC = 25 °C.
b:Surface mounted on 1" x 1" FR4 board.
c:t = 5 s.
d: Maximum under steady state conditions is 175 °C/W.
Electrical Characteristics (TA=25℃ unless otherwise noted)
Parameter
Symbol
Condition
Min
Typ
Max
Unit
OFF Characteristics
Drain-source breakdown voltage
BVDSS
VGS=0V, ID=250µA
100
-
-
V
Zero gate voltage drain current
IDSS
VDS=100V, VGS=0V
-
-
1
µA
Gate-body leakage
IGSS
VDS=0V, VGS=±20V
-
-
±100
nA
1.2
1.9
2.5
V
-
200
220
220
260
1
-
-
-
423
-
-
17
-
-
14
-
-
6
-
-
10
-
-
10
-
-
6
-
-
6.73
-
-
2.06
-
-
2.69
-
-
0.76
1.16
ON Characteristics
Gate threshold voltage
VGS(th)
Drain-source on-state resistance
RDS(ON)
Forward transconductance
VDS=VGS, ID=250µA
gfs
VGS=10V, ID=2A
VGS=4.5V, ID=2A
VDS=5V, ID=1A
mΩ
S
Dynamic Characteristics
Input capacitance
CISS
Output capacitance
COSS
Reverse transfer capacitance
CRSS
VDS=50V ,VGS=0V
f=1.0MHz
pF
Switching Characteristics
Turn-on delay time
Rise time
Turn-off delay time
Fall time
tD(ON)
VDD=50V
RL=39 ohm
VGS=10V
RG=1ohm
tr
tD(OFF)
tf
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDS=50V
ID=2A
VGS=10V
ns
nC
DRAIN-SOURCE DIODE CHARACTERISTICS
Diode forward voltage
Rev.1.1 —Jan.8.2018
VSD
VGS=0V,Is=2A
2
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V
NP2N10VR
Typical Performance Characteristics
10
10
9
9
8
10V
ID-Drain Current(A)
ID-Drain Current(A)
8
7
6
4.5V
3.3V
5
4
3
2
1
7
6
5
4
3
2
1
2.5V
0
0
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
0.0
0.5
Vds Drain-Source Voltage(V)
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
5.0
Vgs Gate-Source Voltage(V)
Fig1 Output Characteristics
Fig2 Transfer Characteristics
500
1000
400
800
Capacitance(pF)
Rdson- On Resistance(mR)
900
300
VGS=4.5V
200
VGS=10V
100
700
600
Ciss
500
400
300
200
Coss
0
0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
0
1
ID-Drain Current(A)
2
3
4
5
6
7
8
9
10
6.3
7.0
Vds Drain-Source Voltage(V)
Fig3 Rdson-Drain current
Fig4 Capacitance vs Vds
400
5.0
380
4.5
360
4.0
Vgs Gate-Source Voltage(V)
Rds- On Resistance(mR)
Crss
100
340
320
300
280
260
240
220
3.5
3.0
2.5
2.0
1.5
1.0
0.5
200
0.0
0
1
2
3
4
5
6
7
8
9
10
0.0
Vgs Gate-Source Voltage(V)
1.4
2.1
2.8
3.5
4.2
4.9
5.6
Qg Gate Charge(nC)
Fig5 Rdson-Gate Drain voltage
Rev.1.1 —Jan.8.2018
0.7
Fig6 Gate Charge
3
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NP2N10VR
100
5.0
IS- Reverse Drain Current(A)
Power Dissipation (W)
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
0
15
30
45
60
75
90
105
120
135
150
10
1
0.1
0.0
0.2
0.4
0.6
0.8
1.0
TJ-Junction Temperature(ºC)
Vsd Source -Gate Voltage(V)
Fig7 Power De-rating
Fig8 Source-Drain Diode Forward
Rev.1.1 —Jan.8.2018
4
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1.2
NP2N10VR
Package Information
SOT-23
Rev.1.1 —Jan.8.2018
5
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