NP2301BVR-G

NP2301BVR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2301BVR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  V DS =-20V，I D =-2.4A R DS(ON)(Typ.)= 86mΩ @VGS =-4.5V R DS(ON)(Typ.)= 110mΩ @VGS =-2.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23 (TOP VIEW) D 3 Application   23BL PWM applications Load switch Package  SOT-23 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2301BVR-G -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS -20 V Gate-source voltage V GS ±12 V a Drain current-continuous @Tj=125℃ -pulse db ID -2.4 A I DM -8 A Drain-source Diode forward current Is -1.25 A Maximum power dissipation PD 1 W Operating junction Temperature range Tj -55—150 ℃ Rev.1.0 —Oct. 26. 2017 1 www.natlinear.com NP2301BVR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =-250µA -20 - - V Zero gate voltage drain current I DSS V DS =-20V, V GS =0V - - -1 µA Gate-body leakage I GSS V DS =0V, V GS =±12V - - ±100 nA -0.5 -0.7 -1.2 V V GS =-4.5V, I D =-2A - 86 120 V GS =-2.5V, I D =-1A - 110 150 V GS =-5V, I D =-2A - 5 - - 325 - - 63 - - 37 - - 11 - - 5,5 - - 22 - - 8 - - 3.2 - - 0.6 - - 0.9 - - -0.81 -1.2 ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance V DS =V GS , I D =-250µA gfs mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =-10V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time t D(ON) Rise time V DD =-10V I D =-1A V GEN =-4.5V R L =10ohm R GEN =-60ohm tr Turn-off delay time t D(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd V DS =-10V,I D =-1A V GS =-4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=-1.25A V Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics Thermal Resistance junction-to ambient Rev.1.0 —Oct. 26. 2017 Rth JA 2 100 ℃/W www.natlinear.com NP2301BVR Typical Performance Characteristics Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com NP2301BVR Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com NP2301BVR Package Information  SOT-23 Rev.1.0 —Oct. 26. 2017 5 www.natlinear.com