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MCR100-8-23L

MCR100-8-23L

  • 厂商:

    FUXINSEMI(富芯森美)

  • 封装:

    SOT23-3

  • 描述:

  • 详情介绍
  • 数据手册
  • 价格&库存
MCR100-8-23L 数据手册
MCR100-8-23L 0.8A Sensitive Gate SCRs Product Summary Symbol Value Unit IT(RMS) 0.8 A VDRM VRRM 600 V IGT 10~200 μA Feature Application With high ability to withstand the shock loading of large current, Provide high dv/dt rate with strong resistance to electromagnetic interference. Power charger, T-tools, massager, solid state relay, AC Motor speed regulation and so on. Package Circuit diagram SOT-23-3L Marking 100-8 www.fuxinsemi.com Page 1 Ver2.1 MCR100-8-23L 0.8A Sensitive Gate SCRs Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Symbol Value Unit Repetitive peak off-state voltage VDRM 600 V Repetitive peak reverse voltage VRRM 600 V RMS on-state current IT(RMS) 0.8 A ITSM 8 A I2t 0.35 A2s dIT/dt 50 A/μs IGM 0.2 A PG(AV) 0.1 W Junction Temperature TJ -40 ~ +110 ℃ Storage Temperature TSTG -40 ~ +150 ℃ Non repetitive surge peak on-state current (full cycle, F=50Hz) I2t value for fusing (tp=10ms) Critical rate of rise of on-state current (IG =2×IGT) Peak gate current Average gate power dissipation Electrical characteristics (TA=25 oC, unless otherwise noted) Parameter Symbol Gate trigger current IGT Gate trigger voltage VGT Gate non-trigger voltage VGD Test Condition VD =12V IT=10mA Tj =25℃ VD =1/2VDRM Tj =110℃ Value Unit Min Max 10 200 μA - 0.8 V 0.2 - V latching current IL VD =12V IG=0.5mA - 4 mA Holding current IH RGK=1kΩ Tj =25℃ - 5 mA 10 - V/μs - 1.7 V Tj=25℃ - 10 μA Tj=110℃ - 0.1 mA Critical-rate of rise of commutation voltage dVD/dt VD=2/3VDRM Gate Open Tj =110℃ STATIC CHARACTERISTICS Forward "on" voltage VTM Repetitive Peak Off-State Current IDRM Repetitive Peak Reverse Current IRRM ITM =1.2A tp=380μs VD =VDRM VR =VRRM THERMAL RESISTANCES Thermal resistance www.fuxinsemi.com Rth(j-c) Junction to case TYP. 75 ℃/W Rth(j-a) Junction to ambient TYP. 150 ℃/W Page 2 Ver2.1 MCR100-8-23L 0.8A Sensitive Gate SCRs Typical Characteristics FIG.1 Maximum power dissipation versus RMS on-state current FIG.2: RMS on-state current versus case temperature 1.2 IT(RMS) (A) 1.2 1.0 1.0 0.8 0.8 0.6 0.6 0.4 0.4 0.2 0.2 P(w) 0 0 IT(RMS) (A) 0.4 0.6 0.2 0.8 1.0 FIG.3: Surge peak on-state current versus number of cycles α=180° Tc (℃) 0 0 25 50 75 100 125 FIG.4: On-state characteristics (maximum values) ITM (A) ITSM (A) 8 tp=10ms One cycle 8 Tj=Tjmax 6 1 4 2 Tj=25℃ 0 1 10 Number of cycles 100 1000 FIG.5: Non-repetitive surge peak on-state current for a sinusoidal pulse with width tp
MCR100-8-23L
物料型号:MCR100-8-23L

器件简介:FUXINSEMI公司生产的0.8A敏感门SCR(Silicon Controlled Rectifier),具有承受大电流冲击的能力,提供高dv/dt率和强电磁干扰抵抗能力。

引脚分配:SOT-23-3L封装,引脚如下: - K(1):门极 - 0:发射极 - G(3):阴极

参数特性: - 重复峰值关断电压(VDRM):600V - 重复峰值反向电压(VRRM):600V - RMS开启电流(IT(RMS)):0.8A - 非重复浪涌峰值开启电流(ITSM):8A(全周期,50Hz) - 触发门极电流(IGT):10~200A - 门极不触发电压(VGD):0.2V(VD = 1/2VDRM,T = 110°C) - 锁定电流(IL):4mA(VD=12V,IG=0.5mA) - 保持电流(IH):5mA(Rak=1kΩ,Tj = 25°C)

功能详解:适用于电源充电器、电动工具、按摩器、固态继电器、交流电机调速等。

应用信息:文档提及了器件的典型特性图,包括最大功率耗散与RMS开启电流的关系、浪涌峰值开启电流与周期数的关系、非重复浪涌峰值开启电流与正弦脉冲宽度的关系等。

封装信息:SOT-23-3L封装的尺寸信息,包括最小和最大尺寸(毫米和英寸)。
MCR100-8-23L 价格&库存

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