NP6003MR-N-G

NP6003MR 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6003MR uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features     V DS =60V ID =3A RDS(ON)=75mΩ @ V GS=10V (Typ:80m Ω) RDS(ON)=83mΩ @ V GS =4.5V (Typ:90m Ω) High density cell design for ultra low Rdson. Fully characterized avalanche voltage and current. Low gate to drain charge to reduce switching losses. S Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application    Power switching application. Hard switched and high frequency circuits. Uninterruptible power supply. NP6003 Package  1 2 G S SOT-23-3L Ordering Information Part Number Storage Temperature Package Devices Per Reel NP6003MR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 60 V Gate-source voltage V GS ±20 V TC=25°C Continuous Drain Current TC=70°C Pulsed Drain Current I DP Maximum power dissipation TC=25°C Power Dissipation – Derate above 25℃ TC=75°C Operating junction Temperature range Rev.1.0 —Oct. 26. 2017 ID 1 PD Tj 3 2 12 2 1.4 -55—150 A A W ℃ www.natlinear.com NP6003MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 60 - - V Static Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =250µA BVDSS Temperature Coefficient △BV DSS /△T J Zero gate voltage drain current I DSS Gate Leakage Current I GSS Gate threshold voltage V GS(th) Drain-source on-state resistance1 R DS(ON) Reference to 25℃,ID=1mA V DS =60V, V GS =0V mV/℃ 33 - - 1 - - 30 V DS =0V, V GS =±20V - - ±100 nA V DS =V GS , I D =250µA 1.2 1.9 2.5 V - 75 90 86 100 T J =85°C V GS =10V, I D =3A V GS =4.5V, I D =2A µA mΩ VDS=10V, VGS=10V 3 - - A ISD=1A,VGS=0V - 0.75 1.1 V - - 3 A - 15 - ns Qrr IF=1.5A, dI/dt=100A/us - 12 - nC Gate Resistance RG VGS=0V, VDS=0V,f=1MHz - 2.0 - Ω Input capacitance C ISS - 175 - - 21 - - 13 - - 15 - - 16 - - 10 - - 10 - - 4.1 On Status Drain Current I D(ON) Diode Characteristics Diode Forward Voltage VSD Diode Continuous Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge 2 Dynamic Characteristics Output capacitance C OSS Reverse transfer capacitance C RSS Turn-on delay time t D(ON) Turn-on Rise time tr Turn-off delay time t D(OFF) Turn-off Fall time tf Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V GS =0V ,V DS =25V f=1.0MHz V GS =10V, V DD =30V, RL=4.7Ω, I D =1.5A, R G =3.3Ω V GS =10V,I D =2A V DS =30V 1 - Note: 1：Pulse test; pulse width ≦ 300ns, duty cycle ≦ 2%. 2：Guaranteed by design, not subject to production testing. Thermal Characteristics Parameter Symbol Typical Thermal Resistance-Junction to Case Rθjc 60 Thermal Resistance junction-to ambient Rθja 90 Rev.1.0 —Oct. 26. 2017 2 ns nC 0.8 - pF Unit ℃/W www.natlinear.com NP6003MR Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com NP6003MR Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com