NP6003VR

NP6003VR 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP6003VR uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications. D G General Features     V DS =60V ID =3A RDS(ON)=78mΩ @ V GS=10V (Typ:76m Ω) RDS(ON)=88mΩ @ V GS =4.5V (Typ:88m Ω) High density cell design for ultra low Rdson. Fully characterized avalanche voltage and current. Low gate to drain charge to reduce switching losses. S Marking and pin assignment SOT-23 (TOP VIEW) D 3 Application    Power switching application. Hard switched and high frequency circuits. Uninterruptible power supply. NP6003 Package  1 2 G S SOT-23 Ordering Information Part Number Storage Temperature Package Devices Per Reel NP6003VR-G -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS 60 V Gate-source voltage V GS ±20 V T C =25°C T C =70°C Continuous Drain Current (TJ = 150 °C) T A =25°C 3 ID T C =25°C T A =25°C Pulsed Drain Current (t = 300 µs) Maximum power dissipation Rev.1.0 —Oct. 26. 2017 T C =25°C 1 1.6b,c 1.3b,c T A =70°C Continuous Source-Drain Diode Current 2 IS A 2.1 1b,c I DM 12 PD 2.5 W www.natlinear.com NP6003VR T C =70°C 1.6 T A =25°C 1.25b,c T A =70°C 0.8b,c T J ,T STG -55—150 ℃ Symbol Typical Maximum Unit t≤5s R θJA 100 130 Steady State R θJF 60 75 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) ℃/W Notes: a:T C = 25 °C. b:Surface mounted on 1" x 1" FR4 board. c:t = 5 s. d: Maximum under steady state conditions is 175 °C/W. Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit 60 - - V Static Characteristics Drain-source breakdown voltage BV DSS BVDSS Temperature Coefficient △BV DSS /△T J Zero gate voltage drain current I DSS Gate Leakage Current I GSS Gate threshold voltage V GS(th) Drain-source on-state resistance1 R DS(ON) V GS =0V, I D =250µA Reference to 25℃,ID=1mA V DS =60V, V GS =0V mV/℃ 33 - - 1 - - 30 V DS =0V, V GS =±20V - - ±100 nA V DS =V GS , I D =250µA 1.2 1.9 2.5 V - 78 90 88 100 T J =85°C V GS =10V, I D =3A V GS =4.5V, I D =2A µA mΩ VDS=10V, VGS=10V 3 - - A ISD=1A,VGS=0V - 0.75 1.1 V - - 3 A - 15 - ns Qrr IF=1.5A, dI/dt=100A/us - 12 - nC Gate Resistance RG VGS=0V, VDS=0V,f=1MHz - 2.0 - Ω Input capacitance C ISS - 175 - - 21 - - 13 - - 15 - - 16 - - 10 - - 10 - On Status Drain Current I D(ON) Diode Characteristics Diode Forward Voltage VSD Diode Continuous Forward Current IS Reverse Recovery Time trr Reverse Recovery Charge 2 Dynamic Characteristics Output capacitance C OSS Reverse transfer capacitance C RSS Turn-on delay time t D(ON) Turn-on Rise time tr Turn-off delay time t D(OFF) Turn-off Fall time Rev.1.0 —Oct. 26. 2017 V GS =0V ,V DS =25V f=1.0MHz V GS =10V, V DD =30V, RL=4.7Ω, I D =1.5A, R G =3.3Ω tf 2 www.natlinear.com pF ns NP6003VR Total gate charge Qg Gate-source charge Q gs Gate-drain charge Q gd V GS =10V,I D =2A V DS =30V 4.1 nC 0.8 - 1 - Package Information  SOT-23 Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com