AP3415AI

AP3415A -20V P-Channel Enhancement Mode MOSFET Description The AP3415A uses advanced trench It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications General Features VDS = -20V,ID = -4.2A RDS(ON) < 37mΩ @ VGS=4.5V ESD=3000V HBM Application Advanced MOSFET process technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Package Marking and Ordering Information Product ID Pack Marking Qty(PCS) AP3415A SOT-23 AP3415A 3000 Absolute max Rating: @TA=25℃ unless otherwise specified Symbol Parameter Max. Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V -4 .2① ID @ TC = 70°C Continuous Drain Current, VGS @ 10V -2.4 ① IDM Pulsed Drain Current ② -30 PD @TC = 25°C Power Dissipation ③ 1.4 W VDS Drain-Source Voltage -20 V VGS Gate-to-Source Voltage ±8 V TJ TSTG Operating Junction and Storage Temperature Range -55 to +150 °C RθJA Junction-to-ambient (t ≤ 10s) ④ 90 °C /W A 1 AP3415A Rve:1.2 臺灣永源微電子科技有限公司 AP3415A -20V P-Channel Enhancement Mode MOSFET Electrical Characterizes @TA=25℃ unless otherwise specified Symbol V(BR)DSS Parameter Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Qg Conditions VGS = 0V, ID = -250μA VGS=-4.5V,ID = -4A VGS=-2.5V,ID = -4A VGS=-1.8V,ID = -2A VDS = VGS, ID = -250μA TJ = 125°C VDS = -16V,VGS = 0V Min. -20 — — — -0.3 — — Typ. — 37 45 56 — -0.44 — Max. — 43 54 73 -1.0 — -1 TJ = 125°C — — -50 VGS =8V — — 10 VGS = -8V — — -10 ID = -4A, — 10 — Units V mΩ V μA Gate-to-Source forward leakage μA Total gate charge VDS=-10V, nC VGS = -4.5V Qgs Qgd td(on) Gate-to-Source charge Gate-to-Drain("Miller") charge Turn-on delay time tr td(off) tf Ciss Rise time Turn-Off delay time Fall time Input capacitance Coss Crss Output capacitance Reverse transfer capacitance VGS=-4.5V, VDS =-10V, — — — 0.77 3.5 10 — — — — — — — 8.6 29 13 939 — — — — — — 130 111 — — RGEN=3Ω， VGS = 0V, VDS =-10V, ƒ = 1MHz ns pF Source-Drain Ratings and Characteristics Symbol Parameter Continuous Source Current IS ISM (Body Diode) Conditions Min. Typ. Max. Units MOSFET symbol showing the integral reverse p-n junction diode. — — -4.2A ① A — — -30 A Pulsed Source Current (Body Diode) VSD Diode Forward Voltage IS=1A, VGS=0V — -0.76 -1.0 V trr Reverse Recovery Time TJ = 25°C, IF =-4A, di/dt = 100A/μs — 8.7 — ns Qrr Notes: Reverse Recovery Charge — 2.3 — nC ①Calculated continuous current based on maximum allowable junction temperature. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C 2 AP3415A Rve:1.2 臺灣永源微電子科技有限公司 AP3415A -20V P-Channel Enhancement Mode MOSFET Test circuits and Waveforms EAS test circuit: Switching time test circuit: Gate charge test circuit: Switch Waveforms: 3 AP3415A Rve:1.2 臺灣永源微電子科技有限公司 AP3415A -20V P-Channel Enhancement Mode MOSFET Typical electrical and thermal characteristics Figure 1: Typical Output Characteristics Figure 3. Drain-to-Source Breakdown Voltage Vs. AP3415A Rve:1.2 Figure 4: Normalized On-Resistance Vs. Case Temperature 臺灣永源微電子科技有限公司 4 Case Temperature Figure 2. Gate to source cut-off voltage AP3415A -20V P-Channel Enhancement Mode MOSFET Typical electrical and thermal characteristics Figure 5. Maximum Drain Current Vs. Case Temperature Figure 6. Typical Capacitance Vs. Drain-to-Source Voltage Figure7. Maximum Effective Transient Thermal Impedance Junction-to-Case 5 AP3415A Rve:1.2 臺灣永源微電子科技有限公司 AP3415A -20V P-Channel Enhancement Mode MOSFET Mechanical Data： 6 AP3415A Rve:1.2 臺灣永源微電子科技有限公司 AP3415A -20V P-Channel Enhancement Mode MOSFET Attention 1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications. 2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein. 3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment. 4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. 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