NP2305MR

NP2305MR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2305MR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  VDS =-20V，ID =-4A    RDS(ON)(Typ.)=42mΩ @VGS=-4.5V RDS(ON)(Typ.)=55mΩ @VGS=-2.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   235L PWM applications Load switch Package  SOT-23-3L 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2305MR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS -20 V Gate-source voltage VGS ±12 V ID -4 A -pulse d IDM -12 A Drain-source Diode forward current Is -1.25 A Maximum power dissipation PD 1.2 W Operating junction Temperature range Tj -55—150 ℃ a Drain current-continuous @Tj=125℃ b Rev.1.1 —Oct. 26. 2017 1 www.natlinear.com NP2305MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics BVDSS VGS=0V, ID=-250µA -20 - - V Zero gate voltage drain current IDSS VDS=-20V, VGS=0V - - -1 µA Gate-body leakage IGSS VDS=0V, VGS=±12V - - ±100 nA VDS=VGS, ID=-250µA -0.5 -0.85 -1.5 V VGS=-4.5V, ID=-4.2A - 42 50 VGS=-2.5V, ID=-3A - 55 66 VGS=-5V, ID=-2A - 5 - - 887 - - 90 - - 81 - - 12.5 - - 35 - - 30 - - 10 - - 21.1 - - 1.6 - - 2.9 - - -0.81 -1.2 Drain-source breakdown voltage ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Forward transconductance gfs mΩ S Dynamic Characteristics CISS Input capacitance Output capacitance COSS Reverse transfer capacitance CRSS VDS=-10V ,VGS=0V f=1.0MHz pF Switching Characteristics tD(ON) Turn-on delay time Rise time VDS=-10V ID=-2.8A VGEN=-4.5V RL=10Ω RGEN=60Ω tr tD(OFF) Turn-off delay time Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=-10V,ID=-3A VGS=-4.5V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=-1.25A V Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics Thermal Resistance junction-to ambient Rev.1.1 —Oct. 26. 2017 Rth JA 2 100 ℃/W www.natlinear.com NP2305MR Typical Performance Characteristics 20 30 27 -4.5V 16 14 -I D-Drain Current(A) -I D-Drain Current(A) 18 -3.3V 12 10 -2.5V 8 6 4 -1.5V 2 24 21 18 15 12 9 6 3 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0 1 -Vds Drain-Source Voltage(V) 108 1800 96 1600 84 72 VGS=-2.5V 48 VGS=-4.5V 1200 800 600 400 200 0.84 1.26 1.68 2.10 2.52 2.94 3.36 3.78 Ciss 1000 12 0.42 Coss Crss 0 4.20 0 1 -ID-Drain Current(A) 2 3 4 5 6 7 8 9 10 19.8 22.0 -Vds Drain-Source Voltage(V) Fig3 Rdson-Drain current Fig4 Capacitance vs Vds 180 -10 162 -9 -Vgs Gate-Source Voltage(V) Rds- On Resistance(mR) 5 1400 24 0 0.00 4 Fig2 Transfer Characteristics 2000 Capacitance(pF) Rdson- On Resistance(mR) Fig1 Output Characteristics 36 3 -Vgs Gate-Source Voltage(V) 120 60 2 144 126 108 90 72 54 36 18 -8 -7 -6 -5 -4 -3 -2 -1 0 0 0 1 2 3 4 5 6 7 8 9 10 0.0 -Vgs Gate-Source Voltage(V) 4.4 6.6 8.8 11.0 13.2 15.4 17.6 Qg Gate Charge(nC) Fig5 Rdson-Gate Drain voltage Rev.1.1 —Oct. 26. 2017 2.2 Fig6 Gate Charge 3 www.natlinear.com NP2305MR -I S - Reverse Drain Current(A) 3.0 Power Dissipation (W) 2.7 2.4 2.1 1.8 1.5 1.2 0.9 0.6 0.3 0.0 100 10 1 0.1 0 15 30 45 60 75 90 105 120 135 150 0.2 0.4 0.6 0.8 1.0 -Vsd Source -Gate Voltage(V) TJ-Junction Temperature(ºC) Fig7 Power De-rating Rev.1.1 —Oct. 26. 2017 0.0 Fig8 Source-Drain Diode Forward 4 www.natlinear.com 1.2 NP2305MR Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.1 —Oct. 26. 2017 5 www.natlinear.com