NP3404AMR-G

NP3404AMR 30V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3404AMR uses advanced trench technology to provide excellent RDS(ON), low gate charge and high density cell Design for ultra low on-resistance. This device is suitable for use as a load switch or in PWM applications. D G General Features     S VDS =30V，ID =7A RDS(ON)(Typ.)=16mΩ @VGS=10V RDS(ON)(Typ.)=20mΩ @VGS=4.5V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   NP304A PWM applications Load switch Package 1 2 G S NP—Natlinear Power HF Pb SOT-23-3L 304A—NP3404AMR Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3404AMR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 30 V Gate-source voltage VGS ±20 V 7 A 5 A IDM 28 A EAS,EAR 32 mJ Maximum power dissipation PD 1.4 W Operating junction Temperature range Tj -55—150 ℃ TA=25℃ Continuous Drain Current TA=75℃ Pulsed Drain Current Avalanche energy( L=0.1mH) Rev.1.1 —Jan.8.2018 1 ID www.natlinear.com NP3404AMR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 30 - - V Zero gate voltage drain current IDSS VDS=30V, VGS=0V - - 1 µA Gate-body leakage IGSS VDS=0V, VGS=±20V - - ±100 nA 1.05 1.35 2.5 V - 16 20 20 26 - 22 - - 521 - - 72 - - 57 - - 4.5 - - 2.5 - - 14.5 - - 2.5 - - 7.1 - - 2.1 - - 2.6 - - 0.82 1.16 ON Characteristics Gate threshold voltage VGS(th) Drain-source on-state resistance RDS(ON) Forward transconductance VDS=VGS, ID=250µA gfs VGS=10V, ID=6A VGS=4.5V, ID=5A VGS=5V, ID=6A mΩ S Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=15V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time tD(ON) Rise time VDS=15V VGS=10V RL=2.6 ohm RGEN=3ohm tr Turn-off delay time tD(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=15V,ID=6A VGS=10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=1A V Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Lead Symbol ≤ 10s Steady-State Steady-State RθJA RθJC Typ Max 65 90 85 125 63 80 Unit ℃/W A:The value of R qJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: The R qJA is the sum of the thermal impedence from junction to lead R qJL and lead to ambient. Rev.1.1 —Jan.8.2018 2 www.natlinear.com NP3404AMR Typical Performance Characteristics 40 24 36 10V 20 28 ID-Drain Current(A) ID-Drain Current(A) 32 4.5V 3.3V 24 20 16 12 8 2.5V 16 12 8 4 4 0 0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 0 5.0 1 Vds Drain-Source Voltage(V) 45 900 40 800 35 700 30 VGS=4.5V 20 15 VGS=10V 10 4 5 Ciss 600 500 400 Coss 300 Crss 200 5 100 0 0 0.0 0.6 1.2 1.8 2.4 3.0 3.6 4.2 4.8 5.4 6.0 0 ID-Drain Current(A) 1 2 3 4 5 6 7 8 9 10 Vds Drain-Source Voltage(V) Fig3 Rdson-Drain current Fig4 Capacitance vs Vds 100 5.0 90 4.5 80 4.0 Vgs Gate-Source Voltage(V) Rds- On Resistance(mR) 3 Fig2 Transfer Characteristics 1000 Capacitance(pF) Rdson- On Resistance(mR) Fig1 Output Characteristics 50 25 2 Vgs Gate-Source Voltage(V) 70 60 50 40 30 20 3.5 3.0 2.5 2.0 1.5 1.0 0.5 10 0.0 0 0 1 2 3 4 5 6 7 8 9 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 10 Qg Gate Charge(nC) Vgs Gate-Source Voltage(V) Fig5 Rdson-Gate Drain voltage Rev.1.1 —Jan.8.2018 Fig6 Gate Charge 3 www.natlinear.com NP3404AMR 2.0 100 IS- Reverse Drain Current(A) Power Dissipation (W) 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 15 30 45 60 75 90 105 120 135 150 TJ-Junction Temperature(ºC) 1 0.1 0.0 0.2 0.4 0.6 0.8 1.0 Vsd Source -Gate Voltage(V) Fig7 Power De-rating Rev.1.1 —Jan.8.2018 10 Fig8 Source-Drain Diode Forward 4 www.natlinear.com 1.2 NP3404AMR Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters A A2 A1 e1 Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.1 —Jan.8.2018 5 www.natlinear.com