NP3411MR-G

NP3411MR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3411MR uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. S G General Features     D V DS =-30V，I D =-9A R DS(ON) (Typ.)=28mΩ @V GS =-4.5V R DS(ON) (Typ.)=22mΩ @V GS =-10V High power and current handing capability Lead free product is acquired Surface mount package Marking and pin assignment （Thickness 0.55mm） SOT-23 (TOP VIEW) D 3 Application   PWM applications Load switch NP 3 4 11 Package  SOT-23-3L 1 2 G S NP----Natlinear Power 3411----NP3411 Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3411MR-G -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS -30 V Gate-source voltage V GS ±20 V a Drain current-continuous @Tj=125℃ -pulse db ID -9 A I DM -36 A Drain-source Diode forward current Is -9 A Maximum power dissipation PD 18 W Operating junction Temperature range Tj -55—150 ℃ Rev.1.0 —Dec. 15. 2018 1 www.natlinear.com NP3411MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =-250µA -30 - - V Zero gate voltage drain current I DSS V DS =-30V, V GS =0V - - -1 µA Gate-body leakage I GSS V DS =0V, V GS =±20V - - ±100 nA V DS =V GS , I D =-250µA -1 -1.7 -2.5 V V GS =-10V, I D =-9A - 22 28 V GS =-4.5V, I D =-6A - 28 36 V GS =-5V, I D =-9A - 5 - - 1092 - - 124 - - 99 - - 8 - - 6 - - 17 - - 5 - - 11.4 - - 4.3 - - 3.5 - - -0.81 -1.2 ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance gfs mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =-15V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time t D(ON) Rise time V DS =-15V V GS =-10V R L =2.3Ω R GEN =3Ω tr Turn-off delay time t D(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd V DS =-15V,I D =-6A V GS =-10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=-1.25A V Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% c. guaranteed by design, not subject to production testing Thermal Characteristics Thermal Resistance junction-to ambient Rev.1.0 —Dec. 15. 2018 Rth JA 2 100 ℃/W www.natlinear.com NP3411MR Typical Performance Characteristics 25.0 15.0 13.5 VGS=10V -ID-Drain Current(A) -ID-Drain Current(A) 22.5 20.0 VGS=4.5V 17.5 VGS=3.3V 15.0 12.5 10.0 7.5 5.0 VGS=2.5V 12.0 10.5 9.0 7.5 6.0 4.5 3.0 1.5 2.5 0.0 0.0 0 1 2 3 4 5 6 7 8 9 0.0 10 0.5 90 1800 80 1600 70 60 VGS=-3.3V 40 VGS=-4.5V 30 20 2.0 2.5 3.0 3.5 4.0 4.5 5.0 1400 Ciss 1200 1000 800 600 Coss Ciss 400 VGS=-10V 10 200 0 0 Crss Ciss 0 1 2 3 4 5 6 7 8 0.0 9 1.5 3.0 4.5 6.0 7.5 9.0 10.5 12.0 13.5 15.0 -Vds Drain-Source Voltage(V) -ID-Drain Current(A) Fig3 Rdson-Drain current Fig4 Capacitance vs Vds 5.0 -Vgs Gate-Source Voltage(V) 10 -IS- Reverse Drain Current(A) 1.5 Fig2 Transfer Characteristics 2000 Capacitance(pF) Rdson- On Resistance(mR) Fig1 Output Characteristics 100 50 1.0 -Vgs Gate-Source Voltage(V) -Vds Drain-Source Voltage(V) 1 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 0.1 0.0 0.2 0.4 0.6 0.8 1.0 0 1.2 2 3 4 5 6 7 8 9 10 Qg Gate Charge(nC) -Vsd Source -Gate Voltage(V) Fig5 Source-Drain Diode Forward Rev.1.0 —Dec. 15. 2018 1 Fig6 Gate Charge 3 www.natlinear.com 200 20 180 18 Power Dissipation (W) Rds- On Resistance(mR) NP3411MR 160 140 120 100 80 60 40 20 16 14 12 10 8 6 4 2 0 0 0 1 2 3 4 5 6 7 8 9 10 0 15 30 45 60 75 90 105 120 -Vgs Gate-Source Voltage(V) TJ-Junction Temperature(ºC) Fig7 Rdson-Gate Drain voltage Fig8 Power De-rating Rev.1.0 —Dec. 15. 2018 4 135 www.natlinear.com 150 NP3411MR Rev.1.0 —Dec. 15. 2018 5 www.natlinear.com NP3411MR Package Information  SOT-23 Rev.1.0 —Dec. 15. 2018 6 www.natlinear.com