NP2N7002VR-G

NP2N7002VR 60V N-Channel Enhancement Mode MOSFET Description Schematic diagram The NP2N7002VR uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features  VDS =60V，ID =340mA RDS(ON)(Typ.)=1.15Ω @VGS=10V RDS(ON)(Typ.)=1.25Ω @VGS=4.5V     High power and current handing capability Lead free product is acquired Surface mount package ESD Rating: 2000V HBM Marking and pin assignment Application   PWM applications Load switch Package  SOT-23-3L Ordering Information Part Number Storage Temperature Package Devices Per Reel NP2N7002VR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage VDS 60 V Gate-source voltage VGS ±20 V Drain current-continuousa@Tj=125℃ ID 0.34 A -pulse db IDM 0.3 A PD 0.15 W Tj -55—150 ℃ Maximum power dissipation TA=25℃ Operating junction Temperature range Notes: a. surface mounted on FR4 board,t≤10sec b. pulse test: pulse width≤300μs,duty≤2% Rev.1.1 —Oct. 26. 2017 1 www.natlinear.com NP2N7002VR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BVDSS VGS=0V, ID=250µA 60 - - V Zero gate voltage drain current IDSS VDS=48V, VGS=0V - - 1 µA Gate-body leakage IGSS VDS=0V, VGS=±20V - - ±10 µA Gate threshold voltage VGS(th) VDS=VGS, ID=250µA 1 1.4 2.5 V Drain-source on-state resistance RDS(ON) VGS=10V, ID=200mA - 1.15 2.5 VGS=4.5V, ID=200mA VGS=0V IS=300mA VR=25V dIS/dt=-100A/uS - 1.25 3.5 - 30 - - 14.8 - - 3.6 - - 2.1 - - - 10 - 30 - - - 15 - 1.3 - - 0.4 - - 0.1 - - - 1.5 V Unit ON Characteristics Recovered charge Qr Ω nC Dynamic Characteristics Input capacitance CISS Output capacitance COSS Reverse transfer capacitance CRSS VDS=30V ,VGS=0V f=1.0MHz pF Switching Characteristics Turn-on delay time VDD=5V VGS=10V RL=250ohm RGEN=50ohm tD(ON) Rise time tr Turn-off delay time tD(OFF) Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDS=30V,ID=200mA VGS=10V ns nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage VSD VGS=0V,Is=300mA Thermal Characteristics Parameter Symbol Typ max Thermal Resistance-Junction to Case Rθjc 1.7 - Thermal Resistance junction-to ambient RθJa 62.5 - Rev.1.1 —Oct. 26. 2017 2 ℃/W www.natlinear.com NP2N7002VR Typical Performance Characteristics Rev.1.1 —Oct. 26. 2017 3 www.natlinear.com NP2N7002VR Rev.1.1 —Oct. 26. 2017 4 www.natlinear.com NP2N7002VR Package Information  SOT-23-3L Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° Rev.1.1 —Oct. 26. 2017 5 www.natlinear.com