NP3407MR-G

NP3407MR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3407MR uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  V DS =-30V，I D =-4A R DS(ON)(Typ.)=47mΩ @VGS=-10V RDS(ON)(Typ.)=60mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23-3L (TOP VIEW) D 3 Application   347L PWM applications Load switch Package  1 2 G S 347—NP3407 SOT-23-3L L—Package Information Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3407MR-G -55°C to +150°C SOT-23-3L 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS -30 V Gate-source voltage V GS ±20 V TC=25°C Continuous Drain Current TC=70°C Pulsed Drain Current C I DP TC=25°C power dissipation B TC=70°C Junction and Storage Temperature Range Rev.1.0 —Oct. 26. 2017 ID PD T J ,T SGT 1 -4 -3.0 -16 1.4 0.9 -55—150 A A W ℃ www.natlinear.com NP3407MR Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =-250µA -30 - - V Zero gate voltage drain current I DSS V DS =-30V, V GS =0V - - -1 µA Gate-body leakage I GSS V DS =0V, V GS =±20V - - ±100 nA V DS =V GS , I D =-250µA -0.9 -1.3 -2 V V GS =-10V, I D =-4.2A - 47 60 V GS =-4.5V, I D =-3A - 60 85 mΩ V DS =-5V, I D =-4.2A - 5 - - 600 - - 85 - - 65 - ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance G FS S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS Gate resistance V DS =-10V ,V GS =0V f=1.0MHz Rg V DS =15mV，f=1.0MHz t D(ON) V DD =-15V I D =-4.2A V GEN =-10V R L =10ohm R GEN =6ohm pF Ω 10 Switching Characteristics Turn-on delay time Rise time tr Turn-off delay time t D(OFF) Fall time tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr V DS =-15V,I D =-4.2A V GS =-4.5V - 3.0 3.5 - 31 35 - 33 40 - 8 12 - 6.2 - - 1.7 - - 2.5 - IF=-4.2A, dI/dt=100A/ms IF=-4.2A, dI/dt=100A/ms ns nC 24 nS 1.8 nC DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=-4.2A - -0.81 -1.2 V Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AD Maximum Junction-to-Lead Symbol t≤ 10s Steady-State Steady-State R θJA R θJL Typ. Max. 70 90 100 125 62 80 Unit ℃/W A. The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on T J(MAX) =150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature T J(MAX) =150°C. Ratings are based on low frequency and duty Rev.1.0 —Oct. 26. 2017 2 www.natlinear.com NP3407MR cycles to keep initialT J =25°C. D. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. Typical Performance Characteristics 25 20 VGS=-2.0V VGS=-2.5V VGS=-4.5V VGS=-10V 20 VDS=-5V 15 -ID(A) -ID(A) 15 10 10 5 5 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 -VGS(Volts) -VDS(Volts) Fig 1：On-Region Characteristics Fig 2：Transfer Characteristics 200 100 180 VGS=-4.5V VGS=-10V 80 160 VGS=-2.5V,ID=-2A VGS=-4.5V,ID=-3.7A VGS=-10V,ID=-4A RDS(ON)(mR) RDS(on)(mR) 140 60 120 100 80 60 40 40 20 20 0 2 4 6 8 0 10 0 20 40 60 80 100 120 -ID(A) Temperature Fig 3：On-Resistance vs. Drain Current and Gate Voltage Fig 4：On-Resistance vs. Junction Temperature 25 150 ID=-4A 20 15 -IS(A) RDS(ON)(mR) 120 90 10 60 5 30 0 2 4 6 8 10 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD(V) -VGS(V) Fig 5：On-Resistance vs. Gate-Source Voltage Rev.1.0 —Oct. 26. 2017 0 0.0 3 Fig 6：Body-Diode Characteristics www.natlinear.com NP3407MR Package Information  SOT-23-3L θ D b E E1 L 0.2 e c Symbol Dimensions In Millimeters Dimensions In Inches Min Max Min Max A 1.050 1.250 0.041 0.049 A1 0.000 0.100 0.000 0.004 A2 1.050 1.150 0.041 0.045 b 0.300 0.500 0.012 0.020 c 0.100 0.200 0.004 0.008 D 2.820 3.020 0.111 0.119 E 1.500 1.700 0.059 0.067 E1 2.650 2.950 0.104 0.116 e Rev.1.0 —Oct. 26. 2017 A A2 A1 e1 0.950(BSC) 0.037(BSC) e1 1.800 2.000 0.071 0.079 L 0.300 0.600 0.012 0.024 θ 0° 8° 0° 8° 4 www.natlinear.com