NP3407VR-G

NP3407VR 30V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3407VR uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. S G General Features D  V DS =-30V，I D =-4A R DS(ON)(Typ.)=45mΩ @VGS=-10V RDS(ON)(Typ.)=60mΩ @VGS=-4.5V  High power and current handing capability  Lead free product is acquired  Surface mount package Marking and pin assignment SOT-23 (TOP VIEW) D 3 Application   347S PWM applications Load switch Package  SOT-23 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3407VR-G -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS -30 V Gate-source voltage V GS ±20 V T C =25°C T C =70°C Continuous Drain Current (TJ = 150 °C) T A =25°C -4 ID T C =25°C T A =25°C Pulsed Drain Current (t = 300 µs) Rev.1.0 —Oct. 26. 2017 IS I DM 1 -3.5b,c -2.7b,c T A =70°C Continuous Source-Drain Diode Current -3.5 A -1.4 -1b,c -12.8 www.natlinear.com NP3407VR T C =25°C 1.7 T C =70°C Maximum power dissipation 1.1 PD T A =25°C W 1b,c 0.6b,c T A =70°C T J ,T STG -55—150 ℃ Symbol Typical Maximum Unit t≤5s R θJA 100 130 Steady State R θJF 60 75 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) ℃/W Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =-250µA -30 - - V Zero gate voltage drain current I DSS V DS =-30V, V GS =0V - - -1 µA Gate-body leakage I GSS V DS =0V, V GS =±20V - - ±100 nA -0.7 -1.3 -2.5 V 45 65 ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance V DS =V GS , I D =-250µA V GS =-10V, I D =-4A gfs V GS =-4.5V, I D =-3A - 62 90 V DS =-5V, I D =-4A - 10 - - 700 - - 120 - - 75 - - 9 - - 5 - - 28 - - 12.5 - - 14 - - 3.1 - - 3 - mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =-10V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge t D(ON) tr t D(OFF) tf Qg Gate-source charge Qgs Gate-drain charge Qgd Rev.1.0 —Oct. 26. 2017 V DD =-15V I D =-4A V GEN =-10V R L =10ohm R GEN =6ohm V DS =-15V,I D =-4A V GS =-4.5V 2 ns nC www.natlinear.com NP3407VR DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=-4.2A - -0.81 -1.2 V Typical Performance Characteristics 25 20 VGS=-2.0V VGS=-2.5V VGS=-4.5V VGS=-10V 20 VDS=-5V 15 -ID(A) -ID(A) 15 10 10 5 5 0 0.0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 -VGS(Volts) -VDS(Volts) Fig 1：On-Region Characteristics Fig 2：Transfer Characteristics 200 100 180 VGS=-4.5V VGS=-10V 80 160 VGS=-2.5V,ID=-2A VGS=-4.5V,ID=-3.7A VGS=-10V,ID=-4A RDS(ON)(mR) RDS(on)(mR) 140 60 120 100 80 60 40 40 20 20 0 2 4 6 8 0 10 0 20 40 60 80 100 120 -ID(A) Temperature Fig 3：On-Resistance vs. Drain Current and Gate Voltage Fig 4：On-Resistance vs. Junction Temperature 25 150 ID=-4A 20 15 -IS(A) RDS(ON)(mR) 120 90 10 60 5 0 0.0 30 0 2 4 6 8 10 Fig 5：On-Resistance vs. Gate-Source Voltage Rev.1.0 —Oct. 26. 2017 0.2 0.4 0.6 0.8 1.0 1.2 1.4 -VSD(V) -VGS(V) Fig 6：Body-Diode Characteristics 3 www.natlinear.com NP3407VR Package Information  SOT-23 Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com