NP3415EVR-G

NP3415EVR 20V P-Channel Enhancement Mode MOSFET Description Schematic diagram The NP3415EVR uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications. General Features      V DS =-20V，I D =-4A R DS(ON)(Typ.)=38mΩ @VGS=-2.5V R DS(ON)(Typ.)=46mΩ @VGS =-4.5V High power and current handing capability Lead free product is acquired Surface mount package ESD Rating: 2500V HBM Marking and pin assignment SOT-23 (TOP VIEW) D 3 Application   3415E PWM applications Load switch Package  SOT-23 1 2 G S Ordering Information Part Number Storage Temperature Package Devices Per Reel NP3415EVR-G -55°C to +150°C SOT-23 3000 Absolute Maximum Ratings (TA=25℃ unless otherwise noted) parameter symbol limit unit Drain-source voltage V DS -20 V Gate-source voltage V GS ±8 V T C =25°C T C =70°C Continuous Drain Current (TJ = 150 °C) T A =25°C -4 ID T C =25°C T A =25°C Pulsed Drain Current (t = 300 µs) Rev.1.0 —Oct. 26. 2017 IS I DM 1 -3.7b,c -2.9b,c T A =70°C Continuous Source-Drain Diode Current -3.5 A -1.4 -1b,c -12 www.natlinear.com NP3415EVR T C =25°C 1.7 T C =70°C Maximum power dissipation 1.1 PD T A =25°C W 1b,c 0.6b,c T A =70°C T J ,T STG -55—150 ℃ Symbol Typical Maximum Unit t≤5s R θJA 100 130 Steady State R θJF 60 75 Operating Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient b, d Maximum Junction-to-Foot (Drain) ℃/W Notes: a. TC = 25 °C. b. Surface mounted on 1" x 1" FR4 board. c. t = 5 s. d. Maximum under steady state conditions is 175 °C/W. Electrical Characteristics (TA=25℃ unless otherwise noted) Parameter Symbol Condition Min Typ Max Unit OFF Characteristics Drain-source breakdown voltage BV DSS V GS =0V, I D =-250µA -20 - - V Zero gate voltage drain current I DSS V DS =-20V, V GS =0V - - -1 µA Gate-body leakage I GSS V DS =0V, V GS =±8V - - ±10 µA -0.4 -0.59 -0.9 V V GS =-4.5V, I D =-4A - 38 45 V GS =-2.5V, I D =-4A - 46 55 V DS =-5V, I D =-4A 8 - - - 751 - - 115 - - 80 - - 13 - - 9 - - 19 - - 29 - - 9.3 - - 1 - - 2.2 - ON Characteristics Gate threshold voltage V GS(th) Drain-source on-state resistance R DS(ON) Forward transconductance V DS =V GS , I D =-250µA gfs mΩ S Dynamic Characteristics Input capacitance C ISS Output capacitance C OSS Reverse transfer capacitance C RSS V DS =-10V ,V GS =0V f=1.0MHz pF Switching Characteristics Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge t D(ON) tr t D(OFF) tf Qg Gate-source charge Qgs Gate-drain charge Qgd Rev.1.0 —Oct. 26. 2017 V DD =-10V I D =-2.8A V GEN =-4.5V R L =10ohm R GEN =-60ohm V DS =-10V,I D =-3A V GS =-4.5V 2 ns nC www.natlinear.com NP3415EVR DRAIN-SOURCE DIODE CHARACTERISTICS Diode forward voltage V SD V GS =0V,Is=-1.25A - -0.81 -1.2 V Typical Performance Characteristics Rev.1.0 —Oct. 26. 2017 3 www.natlinear.com NP3415EVR Rev.1.0 —Oct. 26. 2017 4 www.natlinear.com NP3415EVR Rev.1.0 —Oct. 26. 2017 5 www.natlinear.com NP3415EVR Package Information  SOT-23 Rev.1.0 —Oct. 26. 2017 6 www.natlinear.com