HSS2N15

HSS2N15 N-Ch 150V Fast Switching MOSFETs Description Product Summary The HSS2N15 is the high cell density trenched Nch MOSFETs, which provides excellent RDSON and efficiency for most of the small power switching and load switch applications. The HSS2N15 meet the RoHS and Green Product requirement with full function reliability approved. VDS 150 V RDS(ON),max 280 mΩ ID 1.8 A ⚫ ⚫ ⚫ ⚫ SOT23 Pin Configuration Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 150 V VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ ±20 V Continuous Drain Current, VGS @ 10V1 1.8 A Continuous Drain Current, VGS @ 10V1 1.4 A Current2 7.2 A Dissipation3 1.3 W Pulsed Drain Total Power TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter RθJA Thermal Resistance Junction-ambient RθJC Thermal Resistance Junction-Case1 www.hs-semi.cn Ver 2.1 1 Typ. Max. Unit --- 100 ℃/W --- 80 ℃/W 1 HSS2N15 N-Ch 150V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter BVDSS Drain-Source Breakdown Voltage RDS(ON) Static Drain-Source On-Resistance2 VGS(th) Conditions Min. Typ. Max. Unit 150 --- --- V VGS=10V , ID=2A --- 240 280 VGS=4.5V , ID=1A --- 250 300 VGS=0V , ID=250uA m Gate Threshold Voltage VGS=VDS , ID =250uA 1.0 2 2.5 V IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=25℃ --- --- 1 uA IDSS Drain-Source Leakage Current VDS=150V , VGS=0V , TJ=125℃ --- --- 30 uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA Qg Total Gate Charge (10V) --- 18 --- Qgs Gate-Source Charge --- 4.6 --- Qgd Gate-Drain Charge --- 5.7 --- Td(on) Turn-On Delay Time --- 13 --- Tr Td(off) Tf VDS=75V , VGS=10V , ID=2A Rise Time VDD=75V , VGS=10V , RG=6 --- 19 --- Turn-Off Delay Time ID=2A --- 26 --- nC ns Fall Time --- 9 --- Ciss Input Capacitance --- 840 --- Coss Output Capacitance --- 119 --- Crss Reverse Transfer Capacitance --- 25 --- Min. Typ. Max. Unit VG=VD=0V , Force Current --- --- 1.8 A VGS=0V , IS=1A , TJ=25℃ --- --- 1.2 V VDS=75V , VGS=0V , f=1MHz pF Diode Characteristics Symbol IS VSD Parameter Continuous Source Current1,4 Diode Forward Voltage2 Conditions \ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. www.hs-semi.cn Ver 2.1 2 HSS2N15 N-Ch 150V Fast Switching MOSFETs Typical Characteristics www.hs-semi.cn Ver 2.1 3 HSS2N15 N-Ch 150V Fast Switching MOSFETs www.hs-semi.cn Ver 2.1 4 HSS2N15 N-Ch 150V Fast Switching MOSFETs Ordering Information Part Number HSS2N15 www.hs-semi.cn Package code SOT-23L Ver 2.1 Packaging 3000/Tape&Reel 5