ASDM7002EZA-R

ASDM7002EZA 60V N-Channel MOSFET Product Summary Features • • Reliable and Rugged ROHS Compliant & Halogen-Free 60 V R DS(on),Typ@ VGS=10 V 1.6 Ω ID 0.3 A V • ESD Protection ESD>2K Application • Direct Logic-Level Interface: TTL/CMOS • Battery Operated Systems • Solid-State Relays DSS SOT-23 Absolute maximum ratings (Ta=25℃ unless otherwise noted) Symbol Parameter Rating Unit VDSS Drain-Source Voltage 60 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C 0.3 A TA=25°C 1.2 A TA=25°C 0.3 TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current ① IDM ID PD Pulse Drain Current Tested Continuous Drain Current Maximum Power Dissipation TA=70°C 0.25 TA=25°C 0.36 TA=70°C 0.23 V A W Thermal Characteristics Symbol ② RJA Parameter Thermal Resistance-Junction to Ambient Steady State Rating Unit 350 °C/W Note ①：Max. current is limited by junction temperature. Note ②：Surface Mounted on 1in2 FR-4 board with 1oz. DEC 2018 Version1.1 1/7 Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET Electrical characteristics (TA=25 oC, unless otherwise noted) Symbol Parameter Static Electrical Characteristics Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) ○3 gfs VGS=0V, ID=250A 60 - - V VDS=60V, VGS=0V - - 1 uA 2.5 V Gate Leakage Current VGS=±20V, VDS=0V - - ±10 uA VGS=10V, ID=0.3A - 1.6 2.5 Drain-Source On-state Resistance VGS=4.5V, ID=0.2A - 1.9 3.0 Forward Transconductance VDS=10V, ID=0.2A - 0.45 - - 26.2 - - 2.7 - - 1.7 - - 1.0 - - 19.4 - - 23.2 - - 21 - - 0.9 - - 1.7 - - 0.4 - - 0.3 - 0.4 0.8 1.1 V - 7.4 - - 2.3 - nS nC  S ④ Output Capacitance Reverse Transfer Capacitance Turn-on Dela y Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time VGS=0V, VDS=30V, Freq.=1MHz VDD=30V, ID=0.3A, VGS=10V, RGEN=10 Turn-off Fall Time Qg Total Gate Charge Qg Total Gate Charge Gate-Source Charge Qgd Gate-Drain Charge Source-Drain Characteristics VSD○3 Diode Forward Voltage trr Reverse Recovery Time Qrr Unit 1.5 Coss Qgs Max 1.0 Input Capacitance tf Typ VDS=VGS, ID=250uA Ciss td(ON) Min Gate Threshold Voltage Dynamic Characteristics Crss Test Conditions Reverse Recovery Charge VDS=30V, VGS=4.5V, ID=1A VDS=30V, VGS=10V, ID=1A IS=0.1A, VGS=0V IF=0.1A,VGS=0, dlF/dt=100A/us pF nS nC Note ③：Pulse test (pulse width300us, duty cycle2%). Note ④：Guaranteed by design, not subject to production testing. DEC 2018 Version1.1 2/7 Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET Typical Characteristics Figure 1. Output Characteristics Figure 2. On−Resistance vs. ID Figure 3. On−Resistance vs. VGS Figure 4. Gate Threshold Voltage Figure 5. Drain-Source On Resistance Figure 6. Source-Drain Diode Forward DEC 2018 Version1.1 3/7 Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET Figure 7. Capacitance Figure 8. Gate Charge Characteristics Figure 9. Power Dissipation Figure 10. Drain Current Figure 11. Safe Operating Area Figure 12. RJA Transient Thermal Impedance DEC 2018 Version1.1 4/7 Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking Package Packing Quantity ASDM7002EZA-R 7002E SOT-23 Tape&Reel 3000/Reel MARKING PACKAGE 7002E SOT-23 DEC 2018 Version1.1 5/7 Lot Number Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET SOT-23 Package Information Symbol A A1 A2 b c D E E1 e e1 L L1 θ DEC 2018 Version1.1 Dimensions In Millimeters Min. 0.90 0.00 0.90 0.30 0.08 2.80 1.20 2.25 0.95 REF. 1.80 0.55 REF. 0.30 0o 6/7 Max. 1.15 0.10 1.05 0.50 0.15 3.00 1.40 2.55 2.00 0.50 8o Ascend Semicondutor Co.,Ltd ASDM7002EZA 60V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version1.1 7/7 Ascend Semicondutor Co.,Ltd