ASDM3416EZA-R

ASDM3416EZA 20V N-Channel MOSFET Product Summary General Description ● Trench Power LV MOSFET technology ● High Power and current handing capability ● ESD Protected Up to 3.5KV (HBM) Applications V DS R DS(on),Typ @ VGS=4.5 V ID ● PWM application ● Load switch 20 V 16 mΩ 7.0 A Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Limit Unit Drain-source Voltage VDS 20 V Gate-source Voltage VGS ±12 V 7.0 TA=25℃ @ Steady State Drain Current ID A 5.6 TA=70℃ @ Steady State Pulsed Drain Current A IDM 28 A Total Power Dissipation @ TA=25℃ PD 1.3 W RθJA 96 ℃/ W TJ ,TSTG -55～+150 ℃ Thermal Resistance Junction-to-Ambient @ Steady State Junction and Storage Temperature Range DEC 2018 Version2.0 1/7 Ascend Semicondutor Co.,Ltd ASDM3416EZA 20V N-Channel MOSFET Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=250μA 20 Zero Gate Voltage Drain Current IDSS VDS=20V,VGS=0V Typ Max Units Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current V 1 μA VGS= ±10V, VDS=0V 2.5 ±10 μA VGS= ±5V, VDS=0V 300 ±1000 nA 0.62 1.0 V VGS= 4.5V, ID=7.0A 16 18 VGS= 2.5V, ID=4.0A 19 22 VGS= 1.8V, ID=3.0A 25 39 IGSS VGS(th) VDS= VGS, ID=250μA RDS(ON) VSD 0.45 IS=7.0A,VGS=0V IS mΩ 1.2 V 7.0 A Dynamic Parameters Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss 78 Total Gate Charge Qg 8.1 Gate Source Charge Qgs Gate Drain Charge Qgd 3 Turn-on Delay Time tD(on) 1.2 Turn-on Rise Time tr 640 VDS=10V,VGS=0V,f=1MHZ 147 pF Switching Parameters VGS=4.5V,VDS=10V,ID=7.0A 2.4 nC 2.4 VGS=4.5V,VDD=10V, RL=1.5Ω, RGEN=3Ω Turn-off Delay Time Turn-off Fall Time ns tD(off) 22 tf 7 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. DEC 2018 Version2.0 2/7 Ascend Semicondutor Co.,Ltd ASDM3416EZA 20V N-Channel MOSFET Typical Performance Characteristics Figure1. Output Characteristics Figure2. Transfer Characteristics Figure3. Capacitance Characteristics Figure4. Gate Charge Figure5. Drain-Source on Resistance DEC 2018 Version2.0 Figure6. Drain-Source on Resistance 3/7 Ascend Semicondutor Co.,Ltd ASDM3416E ZA 20V N-Channel MOSFET Figure7. Safe Operation Area DEC 2018 Version2.0 Figure8. Switching wave 4/7 Ascend Semicondutor Co.,Ltd ASDM3416EZA 20V N-Channel MOSFET Ordering and Marking Information Ordering Device No. Marking ASDM3416EZA-R 8810. Package SOT-23 Quantity Tape&Reel 3000/Reel MARKING PACKAGE 8810. SOT-23 DEC 2018 Version2.0 Packing 5/7 Ascend Semicondutor Co.,Ltd ASDM3416E ZA 20V N-Channel MOSFET SOT-23 Package information ■SOT-23 Suggested Pad Layout DEC 2018 Version2.0 6/7 Ascend Semicondutor Co.,Ltd ASDM3416EZA 20V N-Channel MOSFET IMPORTANT NOTICE Xi‘an Ascend Semiconductor incorporated MAKES NO WARRANTY OF ANY KIND, EXPRESS OR IMPLIED, WITH REGARDS TO THIS DOCUMENT, INCLUDING, BUT NOT LIMITED TO, THE IMPLIED WARRANTIES OF MERCHANTABILITY AND FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION). Xi‘an Ascend Semiconductor Incorporated and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. Xi‘an Ascend Semiconductor Incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does Xi‘an Ascend Semiconductor Incorporated convey any license under its patent or trademark rights, nor the rights of others. Any Customer or user of this document or products described herein in such applications shall assume . all risks of such use and will agree to hold Ascendsemi Incorporated and all the companies whose products are represented on Xi‘an Ascend Semiconductor Incorporated website, harmless against all damages. Xi‘an Ascend Semiconductor Incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. Should Customers purchase or use Xi‘an Ascend Semiconductor Incorporated products for any unintended or unauthorized application, Customers shall indemnify and hold Xi‘an Ascend Semiconductor Incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized application. www.ascendsemi.com DEC 2018 Version2.0 7/7 Ascend Semicondutor Co.,Ltd