DP3415

DP3415 DP3415 P-Channel Enhancement Mode Field Effect Transistor General description P-Channel Enhancement Mode Field Effect Transistor Features: • VDS (V) =-20V • ID =-5 A (VGS =-4.5V) • RDS(ON) ＜ 42mΩ (VGS =-4.5V) • RDS(ON) ＜ 60mΩ (VGS =-2.5V) • RDS(ON) ＜ 120mΩ (VGS =-1.8V) • ESD Protected UP to 2.0KV(HBM) • Trench Power LV MOSFET technology • High Density Cell Design for Low RDS(ON) • High Speed switching Applications • Battery protection • Load switch • Power management Device Marking: Device Type Marking DP3415 3415E or AFXL* Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Rating Drain-Source Voltage VDS -20 Gate-Source Voltage VGS ±12 Unit V Continuous Drain Current TA=25°C TA=70°C Pulsed Drain Current Power Dissipation Thermal Resistance.Junction- to-Ambient Junction Temperature ID -5 -4.2 A IDM -23 TA=25°C PD 1.3 W Steady-State RthJA 96 ℃/W TJ 150 ℃ Junction Storage Temperature Range www.doeshare.net Tstg -55 to 150 Page 1 of 5 DP3415 Electrical Characteristics (TJ=25℃ unless otherwise noted) Parameter Symbol Conditions Min Drain-Source Breakdown Voltage BVDSS VGS= 0V, ID=-250μA -20 Zero Gate Voltage Drain Current IDSS VDS=-20V,VGS=0V,TC=25℃ Typ Max Units Static Parameter Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Diode Forward Voltage Maximum Body-Diode Continuous Current V -1 μA VGS= ±10V, VDS=0V ±2.5 ±10 μA VGS= ±8V, VDS=0V ±900 ±2000 nA -0.67 -0.95 V VGS= -4.5V, ID=-4.0A 35 42 VGS= -2.5V, ID=-3.0A 47 60 VGS= -1.8V, ID=-1.5A 64 120 -0.8 -1.2 V -5 A IGSS VGS(th) RDS(ON) VDS= VGS, ID=-250μA VSD IS=-5A,VGS=0V -0.50 IS mΩ Dynamic Parameters Input Capacitance Ciss 940 Output Capacitance Coss Reverse Transfer Capacitance Crss 116 Total Gate Charge Qg 7.2 Gate Source Charge Qgs Gate Drain Charge Qgd Turn-on Delay Time tD(on) VDS=-10V,VGS=0V,f=1MHZ 219 pF Switching Parameters VGS=-4.5V,VDD=-10V,ID=-4A 1.2 1.6 VGS=-4.5V,VDD=-10V, RL=2.5Ω, RGEN=3Ω 15 ns Turn-on Rise Time tr Turn-off Delay Time tD(off) 21 tf 12 Turn-off Fall Time nC 63 A. Pulse Test: Pulse Width≤300us,Duty cycle ≤2%. B. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch. www.doeshare.net Page 2 of 5 DP3415 Typical Performance Characteristics Figure1. Output Characteristics Figure3. Capacitance Characteristics Figure5. Drain-Source on Resistance www.doeshare.net Figure2. Transfer Characteristics Figure4. Gate Charge Figure6. Drain-Source on Resistance Page 3 of 5 DP3415 Figure7. Safe Operation Area Figure8. Switching wave SOT-23 Package information SOT-23 Suggested Pad Layout www.doeshare.net Page 4 of 5 DP3415 Important Notice and Disclaimer DOESHARE has used reasonable care in preparing the information included in this document, but DOESHARE does not warrant that such information is error free. DOESHARE assumes no liability whatsoever for any damages incurred by you resulting from errors in or omissions from the information included herein. DOESHARE no warranty, representation or guarantee regarding the documents, circuits and products specification, DOESHARE reservation rights to make changes for any documents, products, circuits and specifications at any time without notice. Purchasers are solely responsible for the choice, selection and use of the DOESHARE products and services described herein, and DOESHARE assumes no liability whatsoever relating to the choice, selection or use of the products and services described herein. No license, express or implied, by implication or otherwise under any intellectual property rights of DOESHARE. Resale of DOESHARE products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by DOESHARE for the DOESHARE product or service described herein and shall not create or extend in any manner whatsoever, any liability of DOESHARE. www.doeshare.net Page 5 of 5