ATM3404NSA

ATM3404NSA N-Channel Enhancement Mode Field Effect Transistor Drain-Source Voltage: 30V Drain Current: 5A Features  Trench FET Power MOSFET  Excellent RDS(on) and Low Gate Charge  RDS(ON) < 28mΩ (VGS = 10V)  RDS(ON) < 40mΩ (VGS = 4.5V) Absolute Maximum Ratings Rating Symbol Parameter VDS Drain-Source Voltage VGS Gate-Source Voltage ID@TA=25℃ ID@TA=70℃ IDM PD@TA=25℃ PD@TA=70℃ 10s Steady State Units 30 V ±20 V 1 5.8 5 A 1 4.6 4 A Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V 2 Pulsed Drain Current 25 A Total Power Dissipation 3 1.32 1 Total Power Dissipation 3 0.84 0.64 W W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Typ. 1 RθJA Thermal Resistance Junction-ambient RθJA Thermal Resistance Junction-Ambient (t ≤10s) RθJC 1 Thermal Resistance Junction-Case 1 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/6 Max. Unit --- 125 ℃/W --- 95 ℃/W --- 80 ℃/W Dated:09/2018 Rev: 1.0 ATM3404NSA Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol Parameter Conditions BVDSS Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient 2 RDS(ON) Static Drain-Source On-Resistance VGS(th) Gate Threshold Voltage Min. Typ. Max. Unit VGS=0V , ID=250uA 30 --- --- V Reference to 25℃ , ID=1mA --- 0.025 --- V/℃ VGS=10V , ID=5A --- 24 28 VGS=4.5V , ID=4A --- 34 40 1.2 1.5 2.5 V --- -4.8 --- mV/℃ VDS=24V , VGS=0V , TJ=25℃ --- --- 1 VDS=24V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=5A --- 7 --- S VDS=0V , VGS=0V , f=1MHz --- 2.5 5  --- 6 8.4 --- 2.5 3.5 Rg Gate Resistance Qg Total Gate Charge (4.5V) Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 2.1 2.9 Td(on) Turn-On Delay Time --- 2.4 4.8 Tr Td(off) Tf Ciss VDS=15V , VGS=4.5V , ID=5A uA nC Rise Time VDD=15V , VGS=10V , RG=3.3 --- 7.8 14 Turn-Off Delay Time ID=5A --- 22 44 --- 4 8 --- 572 800 --- 81 112 --- 65 91 Min. Typ. Max. Unit --- --- 5 A --- --- 25 A --- --- 1.2 V --- 19 --- nS --- 1.04 --- nC Fall Time Input Capacitance VDS=15V , VGS=0V , f=1MHz Coss Output Capacitance Crss Reverse Transfer Capacitance ns pF Diode Characteristics Symbol Parameter Conditions 1,4 IS Continuous Source Current ISM Pulsed Source Current 2,4 2 VSD Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ IF=5A , dI/dt=100A/µs , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/6 Dated:09/2018 Rev: 1.0 ATM3404NSA Typical Characteristics Curves 39 ID=5A 33 30 RDSON (mΩ) 36 27 24 21 2 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. Gate-Source IS - Source Current(A) 6 4 TJ=150℃ TJ=25℃ 2 0 0 0.3 0.6 0.9 VSD , Source-to-Drain Voltage (V) Forward Characteristics Of Reverse Fig.4 Gate-Charge CharacteristicsFig.3 1.8 Normalized on resistance Normalized VGS(th) (V) 1.8 1.4 1 0.6 1.4 1.0 0.6 0.2 0.2 -50 0 50 100 -50 150 TJ ,Junction Temperature (℃ ) 0 50 100 150 TJ , Junction Temperature (℃) Fig.5 Normalized VGS(th) vs. TJ Fig.6 Normalized RDSON vs. T J AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/6 Dated:09/2018 Rev: 1.0 ATM3404NSA 1000 F=1.0MHz Capacitance (pF) Ciss 100 Coss Crss 10 1 5 9 13 17 21 25 VDS Drain to Source Voltage (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (R θJA ) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 PDM 0.001 TON SINGLE PULSE T D = TON/T TJ peak = TC + PDM x RθJ C 0.0001 0.0001 0.001 0.01 0.1 1 10 100 1000 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance VDS 90% 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Fig.11 Gate Charge Waveform AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 4/6 Dated:09/2018 Rev: 1.0 ATM3404NSA Package Outline SOT-23 Symbol Dimensions In Millimeters Min. Max. A 0.90 1.15 A1 0.00 0.10 A2 0.90 1.05 b 0.30 0.50 c 0.08 0.15 D 2.80 3.00 E 1.20 1.40 E1 2.25 2.55 e e1 0.95 REF. 1.80 2.00 L L1 0.55 REF. 0.30 0.50 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 5/6 Dated:09/2018 Rev: 1.0 ATM3404NSA Package Specifications AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 6/6 Dated:09/2018 Rev: 1.0