FKD4004

FKD4004 FETek Technology Corp.      N-Ch 40V Fast Switching MOSFETs Super Low Gate Charge 100% EAS Guaranteed Green Device Available Excellent CdV/dt effect decline Advanced high cell density Trench technology Product Summary Description BVDSS RDSON ID 40V 11.5mΩ 42A TO252 Pin Configuration The FKD4004 is the high cell density trenched N-ch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The FKD4004 meet the RoHS and Green Product requirement, 100% EAS guaranteed with full function reliability approved. Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 40 V VGS Gate-Source Voltage ±20 V ID@TC=25℃ Continuous Drain Current, VGS @ 10V1 42 A ID@TC=100℃ Continuous Drain Current, VGS @ 10V1 26 A Continuous Drain Current, VGS @ 10V1 10 A Continuous Drain Current, VGS @ 10V1 8 A 100 A 31 mJ ID@TA=25℃ ID@TA=70℃ IDM EAS IAS PD@TC=25℃ PD@TA=25℃ Pulsed Drain Current2 Single Pulse Avalanche Energy3 Avalanche Current 25 A Total Power Dissipation4 34.7 W Total Power Dissipation4 2 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Parameter Max. Unit RθJA Thermal Resistance Junction-ambient (Steady State)1 --- 62 ℃/W RθJC Thermal Resistance Junction-Case1 --- 3.6 ℃/W Data and specifications subject to change without notice. www.fetek.com.tw Ver : A Typ. 1 FKD4004 FETek Technology Corp. N-Ch 40V Fast Switching MOSFETs Electrical Characteristics (TJ=25 ℃, unless otherwise noted) Symbol BVDSS Parameter Drain-Source Breakdown Voltage △BVDSS/△TJ BVDSS Temperature Coefficient RDS(ON) VGS(th) Static Drain-Source On-Resistance2 Gate Threshold Voltage △VGS(th) VGS(th) Temperature Coefficient IDSS Drain-Source Leakage Current Conditions Min. Typ. Max. Unit VGS=0V , ID=250uA 40 --- --- V Reference to 25℃ , ID=1mA --- 0.034 --- V/℃ VGS=10V , ID=20A --- 9.5 11.5 VGS=4.5V , ID=10A --- 13.5 16.5 1.0 1.5 2.5 V --- -5.64 --- mV/℃ VDS=32V , VGS=0V , TJ=25℃ --- --- 1 VDS=32V , VGS=0V , TJ=55℃ --- --- 5 VGS=VDS , ID =250uA m uA IGSS Gate-Source Leakage Current VGS=±20V , VDS=0V --- --- ±100 nA gfs Forward Transconductance VDS=5V , ID=20A --- 36 --- S Rg Gate Resistance VDS=0V , VGS=0V , f=1MHz --- 2.1 4.2  Qg Total Gate Charge (4.5V) --- 10.7 --- --- 3.3 --- VDS=20V , VGS=4.5V , ID=12A Qgs Gate-Source Charge Qgd Gate-Drain Charge --- 4.2 --- Td(on) Turn-On Delay Time --- 8.6 --- nC Rise Time VDD=12V , VGS=10V , RG=3.3 --- 3.4 --- Turn-Off Delay Time ID=6A --- 25 --- Fall Time --- 2.2 --- Ciss Input Capacitance --- 1314 --- Coss Output Capacitance --- 120 --- Crss Reverse Transfer Capacitance --- 88 --- Min. Typ. Max. Unit --- --- 42 A --- --- 100 A --- --- 1.2 V Tr Td(off) Tf VDS=15V , VGS=0V , f=1MHz ns pF Diode Characteristics Symbol IS ISM VSD Parameter Continuous Source Current1,5 Pulsed Source Current2,5 Diode Forward Voltage2 Conditions VG=VD=0V , Force Current VGS=0V , IS=1A , TJ=25℃ Note : 1.The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper. 2.The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2% 3.The EAS data shows Max. rating . The test condition is V DD=25V,VGS=10V,L=0.1mH,IAS=25A 4.The power dissipation is limited by 150℃ junction temperature 5.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation. Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 2 FKD4004 FETek Technology Corp. N-Ch 40V Fast Switching MOSFETs Typical Characteristics 20 120 ID=12A ID Drain Current (A) 90 RDSON (mΩ) 16 VGS=10V VGS=7V 60 VGS=5V VGS=3V 12 VGS=4.5V 30 8 0 0 0.5 1 1.5 2 2.5 2 3 VDS , Drain-to-Source Voltage (V) 4 6 8 10 VGS (V) Fig.1 Typical Output Characteristics Fig.2 On-Resistance vs. G-S Voltage 6 10 VGS , Gate to Source Voltage (V) IS Source Current(A) VDS=20V 4 TJ=150℃ TJ=25℃ 2 0 0.00 0.25 0.50 0.75 ID=12A 8 6 4 2 0 1.00 0 VSD , Source-to-Drain Voltage (V) 15 20 25 Fig.4 Gate-Charge Characteristics 1.8 diode Normalized On Resistance 1.4 1.4 Normalized VGS(th) 10 QG , Total Gate Charge (nC) Fig.3 Forward Characteristics of Reverse 1.8 5 1.0 1 0.6 0.6 0.2 0.2 -50 0 50 100 TJ ,Junction Temperature (℃ ) Fig.5 VGS(th) vs. TJ Data and specifications subject to change without notice. www.fetek.com.tw Ver : A 150 -50 0 50 100 150 TJ , Junction Temperature (℃) Fig.6 Normalized RDSON vs. TJ 3 FKD4004 FETek Technology Corp. N-Ch 40V Fast Switching MOSFETs 10000 1000.00 F=1.0MHz 100us 1000 1ms 10.00 ID (A) Capacitance (pF) 10us 100.00 Ciss 10ms 100ms 1.00 Coss DC 100 Crss 0.10 TC=25℃ Single Pulse 10 0.01 1 5 9 13 17 21 25 0.1 1 10 VDS Drain to Source Voltage (V) 100 VDS (V) Fig.7 Capacitance Fig.8 Safe Operating Area Normalized Thermal Response (RθJC) 1 DUTY=0.5 0.2 0.1 0.1 0.05 0.02 0.01 P DM 0.01 T ON T SINGLE D = TON/T TJpeak = TC+P DMXRθJC 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t , Pulse Width (s) Fig.9 Normalized Maximum Transient Thermal Impedance EAS= VDS 90% 1 L x IAS2 x 2 BVDSS BVDSS-VDD BVDSS VDD IAS 10% VGS Td(on) Tr Ton Td(off) Tf Toff Fig.10 Switching Time Waveform Data and specifications subject to change without notice. www.fetek.com.tw Ver : A VGS Fig.11 Unclamped Inductive Switching Waveform waveform 4