FH1806D2

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD N-Channel Trench Power MOSFET FH1806D2 General Features Description N-Channel Power MOSFET designed VDSS= 60V , ID=80A R DS(ON) =7.9mΩ (MAX) @V GS =10V ⚫ by Company, according to the advanced TrenchTechnology. This devices extremely communication and conduction ⚫ 100% avalanche tested ⚫ Easy to use/drive ⚫ RoHS compliant losses. So it is very suitable for AC/DC power conversion, load Applications switch and industrial power applications . ⚫ ⚫ ⚫ ⚫ provide an excellent gate charge and RDS(on), which leads to DC/DC Converter Battery Protection Charge/Discharge Load Switch Synchronous Rectification TO-252 D D FH1806 G H1 D G ******** S S Schematic diagram TO-252 top view Marking and pin assignment Absolute Maximum Ratings TA = 25ºC, unless otherwise noted Parameter Symbol Values Unit VDS 60 V Drain- Source Voltage(VGS=0V) Continuous Drain Current2) TC = 25ºC 80 ID TC = 100ºC A 51 Pulsed Drain Current3) ID,pulse 320 A Gate-Source Voltage VGSS ±20 V Single Pulse Avalanche Energy 1) EAS 244 mJ Power Dissipation PD 83 W T J, Tstg -55~+150 ºC Operating Junction and Storage Temperature Range Thermal Resistance, Junction-to-Case RthJC 1.5（MAX） ºC/W Thermal Resistance, Junction-to-Ambient RthJA 62（MAX） ºC/W Notes 1) L=0.5mH, VDD=30V, Start TJ=25℃. 2) Limited by maximum junction temperature. 3) Repetitive Rating: Pulse width limited by maximum junction temperature. www.xfhong.com Ver 1.0 1/7 N-Channel Trench Power MOSFET FH1806D2 Electrical Characteristics TJ = 25ºC, unless otherwise noted Value Parameter Symbol Test Conditions Unit Min. Typ. Max. VGS = 0V, ID = 250µA 60 66 -- VDS = 60V VGS = 0V, TJ = 25ºC -- -- 1 VDS = 60V VGS = 0V, TJ = 125ºC -- -- 100 IGSS VGS = ±20V -- -- ±100 nA Gate-Source Threshold Voltage VGS(th) VDS = VGS, ID = 250µA 2 2.8 4 V Drain-Source On-State-Resistance RDS(on) VGS = 10V, ID = 20A -- 6.5 7.9 RG f = 1.0MHz open drain -- 1.6 -- -- 4009 -- -- 243 -- Static Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Source Leakage Current V(BR)DSS μA IDSS Gate Resistance V mΩ Ω Dynamic Characteristics Input Capacitance Ciss Output Capacitance Coss Reverse Transfer Capacitance Crss -- 201 -- Total Gate Charge Qg -- 76 -- Gate-Source Charge Qgs -- 17 -- Gate-Drain Charge Qgd -- 19 -- VPlateau -- 4.3 -- Turn-on Delay Time td(on) -- 19 -- Turn-on Rise Time tr -- 42 -- Turn-off Delay Time td(off) -- 48 -- -- 29 -- -- -- 1.2 V Gate Plateau Voltage Turn-off Fall Time VGS = 0V, VDS = 30V f = 1.0MHz VDS = 30V, ID = 20A VGS = 10V VDS = 30V, VGS =10V RG = 3Ω, ID = 20A tf pF nC V ns Drain-Source Body Diode Characteristics Body Diode Forward Voltage VSD TJ = 25ºC, ISD = 20A VGS = 0V Continuous Diode Forward Current IS -- -- 80 A Reverse Recovery Time trr -- 28 -- ns Reverse Recovery Charge Qrr -- 52 -- nC IF = 20A, diF/dt = 100A/μs www.xfhong.com Ver 1.0 2/7 N-Channel Trench Power MOSFET FH1806D2 Typical Characteristics TJ = 25ºC, unless otherwise noted 1000 90 PD, Power Dissipation (W) ID, Drain Current (A) 80 100 10 Limited by RDS(on) Single Pulse TC=25℃ TJ=150℃ 1 DC 70 60 50 40 30 20 10 0.1 0 0.1 1 10 VDS, Drain-to-Source Voltage (V) 100 0 90 80 80 70 70 60 50 40 30 20 VGS=10V 60 VGS=6V VGS=5.5V 50 40 VGS=5.0V 30 VGS=4.5V 20 10 10 0 0 25 50 75 100 125 150 TC, Case Temperature (℃) Figure 3. Maximum Continuous Drain Current vs Case Temperature 10 ZθJC, Thermal Response (℃/W) 150 Figure 2. Maximum Power Dissipation vs Case Temperature ID, Drain Current (A) ID, Drain Current (A) Figure 1. Maximum Safe Operating Area 25 50 75 100 125 TC, Case Temperature (℃) 0 1 2 3 VDS, Drain-to-Source Voltage (V) Figure 4. Typical output Characteristics 1 D = 1.0 D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 Single Pulse 0.1 0.01 0.001 0.000001 0.00001 0.0001 0.001 Notes: 1.Duty Cycle, D=t1/t2 2.TJM = PDM*RθJC + TC 0.01 0.1 1 10 T, Rectangular Pulse Duration (s) Figure 5. Maximum Effective Thermal Impedance, Junction to Case www.xfhong.com Ver 1.0 3/7 N-Channel Trench Power MOSFET FH1806D2 Typical Characteristics TJ = 25ºC, unless otherwise noted 100 ID, Drain Current (A) Note: 1.VDS=5V 2.250μs Pulsed Test 100 TJ=150℃ TJ=25℃ 10 1 Is, Source Current (A) 1000 10 TJ=25℃ 1 0.1 0.1 0 3 4 5 6 VGS, Gate-to-Source Voltage (V) Figure 6. Typical Transfer Characteristics 7.4 Pulsed Test TJ = 25℃ 1.8 6.8 6.6 6.4 6.2 VGS = 10V 6 RDS(on) (Normalized) 7 RDS(on) (mΩ) 0.2 0.4 0.6 0.8 1 1.2 VSD, Source-to-Drain Voltage (V) Figure 7. Typical Body Diode Transfer Characteristics 2 7.2 1.6 1.4 1.2 1 0.8 5.8 Pulsed Test VGS = 10V ID = 20A 0.6 5.6 0.4 5.4 0 -50 10 15 20 25 30 ID, Drain Current (A) Figure 8. Drain-to-Source On Resistance vs Drain Current 1.2 5 1.12 VGS = VDS ID = 250μA 1 0.9 0.8 0 50 100 150 TJ, Junction Temperature (℃) Figure 9. Normalized On Resistance vs Junction Temperature VGS = 0V ID = 250μA 1.1 BVDSS (Normalized) 1.1 VGS(th) (Normalized) TJ=150℃ 1.08 1.06 1.04 1.02 1 0.98 0.7 0.96 0.6 0.94 -50 0 50 100 150 TJ, Junction Temperature (℃) Figure 10. Normalized Threshold Voltage vs Junction Temperature www.xfhong.com -50 0 50 100 150 TJ, Junction Temperature (℃) Figure 11. Normalized Breakdown Voltage vs Junction Temperature Ver 1.0 4/7 N-Channel Trench Power MOSFET FH1806D2 Typical Characteristics TJ = 25ºC, unless otherwise noted 10 Vgs, Gate-to-Source Voltage (V) 10000 Capacitance (pF) Ciss 1000 Coss 100 Crss VGS=0V f=1MHz 10 VDS=30V ID=20A 8 6 4 2 0 0 20 40 60 VDS, Drain-to-Source Voltage (V) Figure 12. Capacitance Characteristics www.xfhong.com 0 20 40 60 80 Qg, Gate Charge (nC) Figure 13. Typical Gate Charge vs Gate to Source Voltage Ver 1.0 5/7 N-Channel Trench Power MOSFET FH1806D2 Figure A：Gate Charge Test Circuit and Waveform Figure B：Resistive Switching Test Circuit and Waveform Figure C：Unclamped Inductive Switching Test Circuit and Waveform www.xfhong.com Ver 1.0 6/7 N-Channel Trench Power MOSFET FH1806D2 Package Information : TO-252 COMMON DIMENSIONS INCH MM SYMBOL MIN NOM MAX MIN NOM MAX A 2.20 2.30 2.38 0.087 0.091 0.094 A1 0.00 0.20 0.000 A2 0.97 1.07 1.17 0.038 0.042 0.046 b 0.68 0.78 0.90 0.027 0.031 0.035 b3 5.20 5.33 5.46 0.205 0.210 0.215 c 0.43 0.53 0.61 0.017 0.021 0.024 D 5.98 6.10 6.22 0.235 0.240 0.245 D1 5.30REF E 6.40 E1 4.63 e www.xfhong.com - - 0.008 0.209REF 6.60 6.73 0.252 - - 0.182 2.286BSC 0.260 0.265 - - 0.090BSC H 9.40 10.10 10.50 0.370 0.398 0.413 L 1.38 1.50 1.75 0.054 0.059 0.069 L1 2.90REF 0.114REF L2 0.51BSC 0.020BSC L3 0.88 L4 0.50 L5 1.65 θ 0° - - 1.80 - 1.28 0.035 1.00 0.020 1.95 0.065 8° 0° - - 0.071 - 0.050 0.039 0.077 8° Ver 1.0 7/7