FH17P03D

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD -30V P-Channel MOSFET FH17P03D Description FH17P03D series are from Advanced Power innovated design and silicon process technology to achieve the lowest possible on-resistance and fast switching performance. It provides the designer with an extreme efficient device for use in a wide range of power applications. The TO-252 package is widely preferred for all commercial -industrial surface mount applications using infrared reflow technique and suited for high current application due to the low connection resistance. The through-hole version (FH17P03D) are available for low-profileapplications. TO-252 BV DSS -30V RDS(ON MAX) 9mΩ ID -70A Low On-resistance Simple Drive Requirement Fast Switching Characteristic RoHS Compliant & Halogen-Free R DS(ON) =7.5m Ω (MAX) @V GS =10V D D G G S S Schematic diagram TO-252 top view Marking and pin assignment Absolute Maximum Ratings@Tj=25o.C(unless otherwise specified) Parameter Rating Units Drain-Source Voltage -30 V VGS Gate-Source Voltage +20 V I D@T C=25℃ Drain Current, VGS @ 10V -70 A I D@T C=100℃ Drain Current, VGS @ 10V -40 A -240 A 54.3 W Symbol VDS 1 I DM Pulsed Drain Current PD @T C=25℃ Total Power Dissipation TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol Rthj-c Parameter Maximum Thermal Resistance Junction-case 3 Value Units 2.3 ℃/W ℃/W ℃/W Rthj-a Maximum Thermal Resistance, Junction-ambient (PCB mount) 62.5 Rthj-a Maximum Thermal Resistance, Junction-ambient 110 www.xfhong.com 1/5 Ver1.0 -30V P-Channel MOSFET FH17P03D Electrical Characteristics@Tj=25oC(unless otherwise specified) Symbol Parameter Test Conditions Min. Typ. Max. Units BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250uA -30 - - V RDS(ON) Static Drain-Source On-Resistance2 VGS=-10V, ID=-40A - 7.8 9 mΩ VGS=-4.5V, ID=-30A - 12 15 mΩ -1 -1.35 -3 V VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250uA gfs Forward Transconductance VDS=-10V, ID=-30A - 60 - S IDSS Drain-Source Leakage Current VDS=-24V, VGS=0V - - -10 uA IGSS Gate-Source Leakage VGS= +20V, VDS=0V - - +100 nA ID=-30A - 44 70 nC 2 Qg Total Gate Charge Qgs Gate-Source Charge VDS=-24V - 6.5 - nC Qgd Gate-Drain ("Miller") Charge VGS=-4.5V - 28.5 - nC VDS=-15V - 11 - ns 2 td(on) Turn-on Delay Time tr Rise Time ID=-30A - 67 - ns td(off) Turn-off Delay Time RG=1Ω - 37 - ns tf Fall Time VGS=-10V - 22 - ns Ciss Input Capacitance VGS=0V - 3500 5600 pF Coss Output Capacitance VDS=-25V - 520 - pF Crss Reverse Transfer Capacitance f=1.0MHz - 495 - pF Rg Gate Resistance f=1.0MHz - 2 - Ω Min. Typ. . Source-Drain Diode Symbol Parameter 2 Test Conditions Max. Units VSD Forward On Voltage IS=-30A, VGS=0V - - -1.2 V trr Reverse Recovery Time IS=-10A, VGS=0V, - 34 - ns Qrr Reverse Recovery Charge dI/dt=100A/µs - 30 - nC Notes: 1.Pulse width limited by Max. junction temperature. 2.Pulse test 3.Surface mounted on 1 in2 copper pad of FR4 board www.xfhong.com 2/5 Ver1.0 -30V P-Channel MOSFET FH17P03D 240 160 T C = 25 o C -ID , Drain Current (A) 200 -ID , Drain Current (A) T C = 150 o C -10V -7.0 V -6.0 V -5.0 V 160 V G = - 4.0 V 120 80 120 -10V -7.0V -6.0V -5.0V V G = - 4.0 V 80 40 40 0 0 0 4 8 12 0 16 4 6 8 10 -V DS , Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics 14 2.0 I D = -30 A T C =25 ℃ I D = -40A V G = -10V 1.8 12 1.6 10 . Normalized RDS(ON) RDS(ON) (mΩ ) 2 -V DS , Drain-to-Source Voltage (V) 8 1.4 1.2 1.0 0.8 0.6 0.4 6 2 4 6 8 10 -50 0 50 100 150 T j , Junction Temperature ( o C) -V GS , Gate-to-Source Voltage (V) Fig 3. On-Resistance v.s. Gate Voltage Fig 4. Normalized On-Resistance v.s. Junction Temperature 40 1.6 1.4 T j =150 o C Normalized VGS(th) -IS(A) 30 T j =25 o C 20 1.2 1 0.8 10 0.6 0.4 0 0 0.4 0.8 1.2 -50 1.6 50 100 150 o -V SD , Source-to-Drain Voltage (V) T j , Junction Temperature ( C) Fig 5. Forward Characteristic of Fig 6. Gate Threshold Voltage v.s. Junction Temperature Reverse Diode www.xfhong.com 0 3/5 Ver1.0 -30V P-Channel MOSFET FH17P03D 10 -VGS , Gate to Source Voltage (V) 8 4000 C iss C (pF) V DS =-24V I D =-30A 6 3000 4 2000 2 1000 C oss C rss 0 0 0 20 40 60 1 80 5 9 13 17 21 25 29 Q G , Total Gate Charge (nC) -V DS , Drain-to-Source Voltage (V) Fig 7. Gate Charge Characteristics Fig 8. Typical Capacitance Characteristics 1000 Operation in this area limited by RDS(ON) 100us . 1ms 10 10ms 100ms DC T C =25 o C Single Pulse 1 Normalized Thermal Response (Rthjc) 1 -ID (A) 100 f=1.0MHz 5000 Duty factor=0.5 0.2 0.1 0.1 0.05 PDM t 0.02 T 0.01 Duty factor = t/T Peak Tj = PDM x Rthjc + T C Single Pulse 0.01 0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10 -V DS , Drain-to-Source Voltage (V) t , Pulse Width (s) Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance VG VDS 90% QG -4.5V QGS QGD 10% VGS td(on) tr td(off)tf Charge Fig 11. Switching Time Waveform www.xfhong.com Q Fig 12. Gate Charge Waveform 4/5 Ver1.0 -30V P-Channel MOSFET FH17P03D TO-252 Package Information Symbol Dimensions In Millimeters Min. Dimensions In Inches Max. Min. Max. A 2.200 2.400 0.087 0.094 A1 0.000 0.127 0.000 0.005 b 0.660 0.860 0.026 0.034 c 0.460 0.580 0.018 0.023 D 6.500 6.700 0.256 0.264 D1 5.100 5.460 0.201 0.215 4.830TYP. D2 0.190 TYP. E 6.000 6.200 0.236 0.244 e 2.186 2.386 0.086 0.094 L 9.800 10.400 0.386 0.409 2.900 TYP. L1 L2 1.400 L3 0.114 TYP. 1.700 0.055 0.067 0.063 TYP. 1.600 TYP. L4 0.600 1.000 0.024 0.039 Φ 1.100 1.300 0.043 0.051 θ 0° 8° 0° 8° h 0.000 0.300 0.000 0.012 V www.xfhong.com 5.350 TYP. 0.211 TYP. 5/5 Ver1.0