MPS2222A

MPS2222A General Purpose Transistor NPN Silicon C A B FEATURE Complementary PNP Type available (MPS2907A) DIM A B C D E F G H J L M E G J D MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Units Collector-Base Voltage 75 V VCEO Collector-Emitter Voltage 40 V Emitter-Base Voltage 6 V VEBO Collector Current -Continuous 600 mA PC Collector Power Dissipation 625 mW TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55-150 ℃ O CR IC F 1 2 1. EMITTER C VCBO H F 3 M Value L Parameter MI JS Symbol MILLIMETERS 4.70 MAX 4.80 MAX 3.70 MAX 0.55 MAX 1.00 1.27 0.85 0.45 _ 0.50 14.00 + 2.30 0.51 MAX 2. BASE 3. COLLECTOR TO-92 n co mi Se ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Symbol Test MIN MAX UNIT V(BR)CBO IC= 10uA , IE=0 75 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA , 40 V Emitter-base breakdown voltage V(BR)EBO IE= 10uA, IC=0 6 V Collector cut-off current ICBO VCB= 60V, IE=0 Collector cut-off current ICEX VCE= 60V,VEB(Off)=3V Emitter cut-off current IEBO VEB= 3 V, IC=0 hFE(1) VCE=10V,IC= 150mA hFE(2) VCE=10V,IC= 0.1mA nA 10 nA 100 nA 100 300 or Base-emitter saturation voltage 10 VCE=10V, IC= 500mA hFE(3) Collector-emitter saturation voltage ct * IB=0 du Collector-base breakdown voltage DC current gain * conditions 40 42 VCE(sat)(1) * IC= 500mA, IB=50mA 0.6 V VCE(sat)(2) * IC= 150mA, IB=15mA 0.3 V IC= 500mA, IB= 50mA 1.2 V VBE(sat) * Delay time td VCC=30V, VEB(Off)=-0.5V, 10 nS Rise time tr IC=150mA,IB1=15mA 25 nS Storage time tS 225 nS Fall time tf 60 nS Transition frequency fT VCC=30V,Ic=150mA,IB1=IB2=15mA VCE=20V, IC=20mA, f=100MHz 300 MHz pulse test www.jsmsemi.com 第１／２页 MPS2222A Typical Characteristics O CR MI JS du n co mi Se or ct www.jsmsemi.com 第２／２页