B772

B772 SOT-89-3L Plastic-Encapsulate Transistors TRANSISTOR（PNP） SOT-89-3L FEATURE Low speed switching 1. BASE MARKING:B772 2. COLLETOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -30 V VEBO Emitter-Base Voltage -6 V IC Collector Current -Continuous -3 A PC Collector Power Dissipation 0.5 W RӨJA Thermal Resistance, Junction to Ambient 250   ℃/W TJ,Tstg Operation Junction and Storage Temperature Range -55~150 ℃ 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC=-100μA ,IE=0 -40 V Collector-emitter breakdown voltage V(BR)CEO IC= -10mA , IB=0 -30 V Emitter-base breakdown voltage V(BR)EBO IE= -100μA,IC=0 -6 V Collector cut-off current ICBO VCB= -40V, IE=0 -1 μA Collector cut-off current ICEO VCE=-30V, IB=0 -10 μA Emitter cut-off current IEBO VEB=-6V, IC=0 -1 μA DC current gain hFE VCE= -2V, IC= -1A Collector-emitter saturation voltage VCE(sat) IC=-2A, IB= -0.2A -0.5 V Base-emitter saturation voltage VBE(sat) IC=-2A, IB= -0.2A -1.5 V VCE= -5V, IC=-0.1A fT Transition frequency 60 400 50 f =10MHz MHz CLASSIFICATION OF hFE Rank R O Y GR Range 60-120 100-200 160-320 200-400 V1.0_Aug,2018 -1- www.wpmtek.com B772 SOT-89-3L Plastic-Encapsulate Transistors Typical Characteristics Static Characteristic -1.8 COMMON EMITTER Ta=25℃ -1.6 —— IC COMMON EMITTER VCE= -2V -6.75mA -1.2 -4.5mA -1.0 -3.75mA -5.25mA -2.25mA -0.6 -1.5mA -0.4 -0.2 DC CURRENT GAIN 1000 -3.0mA -0.8 hFE (A) IC -6.0mA -1.4 COLLECTOR CURRENT hFE 10000 -7.5mA Ta=100℃ Ta=25℃ 100 IB=-0.75mA -0.0 -0.0 10 -0.5 -1.0 -1.5 -2.0 -2.5 COLLECTOR-EMITTER VOLTAGE VCEsat —— -1000 -3.0 -3.5 -1 -10 -100 COLLECTOR CURRENT VCE (V) VBEsat —— IC IC -1000 -3000 -1000 -3000 (mA) IC -1500 β=10 β=10 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) -1200 -100 Ta=100 ℃ Ta=25℃ -10 -1 -1 -10 -100 COLLECTOR CURRENT IC -3000 —— -1000 IC Ta=25℃ Ta=100 ℃ -300 -3000 -1 (mA) -10 -100 COLLECTOR CURREMT VBE fT 200 —— IC (mA) IC (MHz) TRANSITION FREQUENCY -10 T= a 25 ℃ T a =1 00 ℃ -100 100 fT (mA) IC -600 COMMON EMITTER VCE= -2V -1000 COLLECTOR CURRENT -900 -1 COMMON EMITTER VCE=-5V Ta=25℃ -0.1 -300 -400 -500 -600 -700 -800 10 -4.23 -900 -1000 -1100-1200 BASE-EMMITER VOLTAGE VBE (mV) PC COLLECTOR POWER DISSIPATION PC (W) 0.6 —— -10 COLLECTOR CURRENT -100 IC (mA) Ta 0.5 0.4 0.3 0.2 0.1 0.0 0 25 50 75 AMBIENT TEMPERATURE V1.0_Aug,2018 100 Ta 125 150 (℃ ) -2- www.wpmtek.com B772 SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L Package Outline Dimensions Dimensions In Millimeters Max Min 1.400 1.600 0.320 0.520 0.400 0.580 0.350 0.440 4.400 4.600 1.550 REF. 2.300 2.600 3.940 4.250 1.500 TYP. 3.000 TYP. 0.900 1.200 Symbol A b b1 c D D1 E E1 e e1 L Dimensions In Inches Min Max 0.055 0.063 0.013 0.020 0.016 0.023 0.014 0.017 0.173 0.181 0.061 REF. 0.091 0.102 0.155 0.167 0.060 TYP. 0.118 TYP. 0.035 0.047 SOT-89-3L Suggested Pad Layout 1.400 0.950 45° 1.600 2.200 1.300 0.700 0.900 0.800 1.500 V1.0_Aug,2018 -3- www.wpmtek.com