BCX56SQ-16

BCX56SQ-10/16 NPN Transistor Features  For AF driver and output stages  High collector current  Low collector-emitter saturation voltage Absolute maximum ratings (Ta=25℃ unless otherwise noted) Parameter Collector Base Voltage Symbol Value Total Power Dissipation Ptot Junction Temperate TJ 100 80 5 1 1.5 0.5 1.3 150 TSTG -65 to 150 VCBO VCEO VEBO IC ICM Collector Emitter Voltage Emitter Base Voltage Collector Current Peak Collector Current Storage Temperature Range Unit V V V A A W ℃ ℃ Electrical characteristics (TA=25℃, unless otherwisenoted) DC Current Gain at VCE=2V, IC=5mA at VCE=2V, IC=150mA Parameter at VCE=2V ,IC=500mA Collector Base Cutoff Current at VCB=30V Emitter Base Cutoff Current at VEB=5V Collector Base Breakdown Voltage at IC=100µA Collector Emitter Breakdown voltage at IC=1mA Emitter Base Breakdown Voltage at IE=100µA Collector Emitter Saturation Voltage at IC=0.5A,IB=50mA Base Emitter Voltage at VCE=2V, IC=0.5A Transition Frequency at VCE=5V, IC=50mA,f=100MHz Symbol BCX56SQ-10 BCX56SQ-16 Min. Typ. Max. Unit 40 63 100 25 - 160 250 - - ICBO - - 100 nA IEBO - - 100 nA V(BR)CBO 100 - - V V(BR)CEO 80 - - V V(BR)EBO 5 - - V - 0.5 V - 1 V HFE VCE(sat) VBE(sat) Collector Capacitance at VCB=10V,f=1MHz - FT - 100 - MHZ CC - 6 - pf AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 1/3 Dated:12/2019 Rev: 1.0 BCX56SQ-10/16 Typical Characteristics curves AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 2/3 Dated:12/2019 Rev: 1.0 BCX56SQ-10/16 Package Outline SOT-89 Device BCX56SQ Package SOT-89 Reel Dimension(inch) 13 AGERTECH MICROELECTRONICS Subsidiary of Sino-Talent International Holdings Ltd. 3/3 Shipping 3,000 Dated:12/2019 Rev: 1.0