2SB1132

2SB1132 2SB1132 TRANSISTOR (PNP) Features: Compliments 2SD1664 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbl Parameter Value Unit VCBO Collector-Base Voltage -40 V VCEO Collector-Emitter Voltage -32 V VEBO Emitter-Base Voltage -5 V IC Collector Current-Continuous -1 A 1. BASE ICP Collector Current -Pulsed -2 A COLLECTOR 500 3. EMITTER Tj Junction Temperature 150 mW ℃ 2. PC Collector Power Dissipation Tstg Storage Temperature -55-150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min V(BR)CBO IC= -50uA, IE=0 V(BR)CEO IC= -1mA, IB=0 V(BR)EBO IE= -50uA, IC=0 ICBO VCB=-20V, IE=0 IEBO VEB=-4V, IC=0 DC current gain hFE(1) VCE= -3V, IC=-100mA Collector-emitter saturation voltage VCE(sat) IC=-500mA, IB=-50mA Transition frequency fT VCE=-5V ,IC=-50mA,f=30MHZ Collector output capacitance Cob VCB=-10V, IE=0,f=1MHZ Collector-base breakdown voltage Collector-emitter breakdown voltage * Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Typ M ax Unit -40 V -32 V -5 V 82 -0.5 uA -0.5 uA 390 -0.2 -0.5 150 20 V MHZ 30 PF CLASSIFICATION OF hFE Rank P Q R Range 82-180 120-270 180-390 BAP BAQ BAR Marking www.yongyutai.com PAGE 1 2SB1132 www.yongyutai.com PAGE 2