HSK4N10

HSK4N10 N-Ch 100V Fast Switching MOSFETs Description Product Summary The HSK4N10 is the high cell density trenched Nch MOSFETs, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The HSK4N10 meet the RoHS and Green Product requirement with full function reliability approved. ⚫ ⚫ ⚫ ⚫ Green Device Available Super Low Gate Charge Excellent Cdv/dt effect decline Advanced high cell density Trench technology VDS 100 V RDS(ON),typ 150 mΩ ID 4 A SOT89 Pin Configuration Absolute Maximum Ratings Symbol Parameter Rating Units VDS Drain-Source Voltage 100 V VGS Gate-Source Voltage ±20 V ID@TA=25℃ Continuous Drain Current, VGS @ 10V1 4 A ID@TA=70℃ Continuous Drain Current, VGS @ 10V1 3.2 A IDM Pulsed Drain Current2 16 A PD@TA=25℃ Total Power Dissipation3 1.25 W TSTG Storage Temperature Range -55 to 150 ℃ TJ Operating Junction Temperature Range -55 to 150 ℃ Thermal Data Symbol RθJA www.hs-semi.cn Parameter Typ. Max. Unit Thermal Resistance Junction-ambient(steady state)1 --- 100 ℃/W Thermal Resistance Junction-ambient(t