2SC2884Y

2SC2884Y NPN-General use transistor 1W 、1.5A、25V Applications： Can be used for switching and amplifying in various electrical and 4 electronic equipments MAX RATINGS 1 parameters symbol rating collector-emitter voltage（IB=0） VCEO 25 unit V collector-base voltage（IE=0） VCBO 40 V emitter - base voltage（IC=0） VEBO 6 V IC 1.5 A Total power dissipation (TA=25℃) Ptot 1 W Max junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector current * 2 3 SOT-89 1：Base 2：Collector Collector 33：Emitter * mounted on printed circuit board. ELECTRONIC CHARACTERISTIC （Unless （ otherwise specified TA=25℃） parameters symbol collector-emitter breakdown voltage V(BR)CEO collector- base breakdown voltage min typ max unit IC=2mA，IB=0 25 — — V V(BR)CBO IC=100µA，IE=0 40 — — V emitter - base breakdown voltage V(BR)EBO IE=100µA，IC=0 6 — — V 1) Forward current transfer ratio hFE VCE=1V；IC=100mA 200 — 300 — collector-base cutoff current ICBO VCB=35V，IE=0 — — 100 nA emitter-base cutoff current IEBO VEB=6V，IC=0 — — 100 nA VCE（sat） IC=800mA，IB=80mA — — 0.5 V fT IC=50mA，VCE=10V， f=100MHz — 100 — MHz collector-emitter saturation voltage1) Transition frequency 1) Test condition pulse method：tw:300µs，duty ratio≤2％ ％. REV.08 1 of 2 2SC2884Y Outline dimensions（see fig.1） unit：mm dimensions symbols A b b1 b2 c D E e e1 HE L LE α Fig.1 REV.08 Outline dimensions 2 of 2 min 1.4 0.35 0.4 SOT-89 typ max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o