2SD1898Q

2SD1898 NPN-General use transistor 1W 、1.0A、32V 4 Applications： Can be used for switching and amplifying in 1 various electrical and electronic equipments 3 SOT SOT-89 1：Base 2：Collector Collector 33：Emitter Absolute Maximum Ratings (Ta = 25℃) parameters 2 symbol rating collector-emitter voltage（IB=0） VCEO 32 unit V collector-base voltage（IE=0） VCBO 40 V emitter - base voltage（IC=0） VEBO 6 V Collector current IC 1 A Total power dissipation (TA=25℃)* Ptot 1 W Max junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ * mounted on printed circuit board. Electrical Characteristics (Ta = 25℃) (Unless otherwise specified) specified parameters symbol collector-emitter breakdown voltage V(BR)CEO collector- base breakdown voltage emitter - base breakdown voltage Forward current transfer ratio1) min typ max unit IC=2mA，IB=0 32 — — V V(BR)CBO IC=100µA，IE=0 40 — — V V(BR)EBO IE=100µA，IC=0 6 — — V 2SD1898Q 120 hFE 270 VCE=1V；IC=100mA 2SD1898R — 180 — 390 collector-base cutoff current ICBO VCB=35V，IE=0 — — 100 nA emitter-base cutoff current IEBO VEB=6V，IC=0 — — 100 nA IC=800mA，IB=80mA — — 0.5 V IC=50mA VCE=10V，f=100MHz — 100 — MHz collector-emitter saturation voltage1) VCE（sat） Transition frequency 1) Test condition fT pulse method：tw:300µs，duty ratio≤2％ ％. REV.08 1 of 2 2SD1898 Outline dimensions（see fig.1） unit：mm dimensions symbols A b b1 b2 c D E e e1 HE L LE α REV.08 2 of 2 min 1.4 0.35 0.4 SOT-89 typ max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o