2SD2150R

2SD2150 NPNGeneral use transistor 1.2W 3A 30V 4 Applications：Can be used for switching and amplifying in 1 various electrical and electronic equipments. 2 3 SOT-89 MAX RATING Parameters Symbol Rating Collector–emitter voltage（IB=0） VCEO 30 Unit V Collector–base voltage（IE=0） VCBO 40 V Emitter – base voltage（IC=0） VEBO 5 V IC 3 A Ptot 1.2 W Max junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector current Total power (TA=25℃)* dissipation * mounted on printed circuit board. Characteristics（Unless otherwise specified，TA=25℃） Parameters symbol Collector–emitter breakdown voltage V(BR)CEO Collector–base breakdown voltage Emitter– base breakdown voltage Forward current transfer R ratio1) Collector–emitter saturation voltage1 ) Transition frequency REV.08 typ max unit IC=10mA，IB=0 30 — — V V(BR)CBO IC=1mA，IE=0 40 — — V V(BR)EBO IE=1mA，IC=0 5 — — V 180 — 390 — 270 — 560 — VCB=30V，IE=0 — — 1 μA IC=2A，IB=200mA — — 0.5 V — 90 — MHz VCE=2V；IC=1A S Collector–base cutoff current 1) min hFE Test condition ICBO VCE（sat） fT IC=100mA ， VCE=5V，f=100MHz pulse method：tw:300µs，duty ratio≤2％. 1 of 2 2SD2150 Typical curve fig.1 Typical curve Outline dimensions unit：mm dimensions symbol A b b1 b2 c D E e e1 HE L LE α Fig.2 Outline dimensions REV.08 2 of 2 min 1.4 0.35 0.4 — 0.35 4.4 2.35 — — — — — — SOT-89 type — — — 1.6 — — — 1.5 3 4.15 2.7 1.0 5o max 1.6 0.55 0.65 — 0.45 4.6 2.55 — — — — — —