2SD1614

2SD1614 NPN-Silicon General use Transistors 1W 、1.5A、25V 4 Applications：Can be used for switching and amplifying in various 1 23 2 1 electrical and electronic circuit. 3 SOT-89 1 Base 2/4 Collector 3 Emitter Maximum ratings Parameters Symbol Rating Collector-emitter voltage (IB=0) VCEO 25 Unit V Collector-base voltage（IE=0） VCBO 40 V Emitter-base voltage（IC=0） VEBO 6 V IC 1.5 A Ptot 1 W Junction temperature Tjm 150 ℃ Storage temperature Tstg -55～150 ℃ Collector current Total dissipation * power(TA=25℃) * Device is mounted on a printed circuit board. Electrical characteristics（Unless otherwise specified，TA=25℃） Parameters Symbol Test condition Min. typ Max. Unit Collector-emitter breakdown voltage V(BR)CEO IC=2mA，IB=0 25 — — V Collector-base breakdown voltage V(BR)CBO IC=100µA，IE=0 40 — — V Emitter-base breakdown voltage V(BR)EBO IE=100µA，IC=0 6 — — V 135 — 270 — 200 — 400 — VCB=35V，IE=0 — — 100 nA VCE（sat） IC=800mA，IB=80mA — — 0.5 V fT IC=50mA，VCE=10V， f=100MHz — 100 — MHz Forward current transfer ratio X M hFE X L Collector-base current Collector-emitter saturation voltage Characteristic frequency REV.08 VCE=1V；IC=100mA ICBO 1 of 2 2SD1614 Typical characteristics REV.08 2 of 3 2SD1614 Outline dimensions（see fig.1） Unit：mm Fig.1 REV.08 Outline Dimensions 3 of 3 Dimensions Symbol A b b1 b2 c D E e e1 HE L LE α min 1.4 0.35 0.4 SOT-89 type max 1.6 0.55 0.65 1.6 0.35 4.4 2.35 0.45 4.6 2.55 1.5 3 4.15 2.7 1.0 5o