KNS5610A

KIA 7A，100V N-CHANNEL MOSFET 5610A SEMICONDUCTORS 1. Features The KXN5610A is the highest performance trench N-ch MOSFETS with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter applications. The KNX5610A meet the RoHS and green product requirement. 2. Features  RDS(ON)=98mΩ(typ.)@VGS=10V  Advanced high cell density trench technology  Super low gate charge  Excellent Cdv/dt effect desline  Green device available 3. Applications  High frequency point-of-load synchronous buck converter  Networking DC-DC power system  Load switch 4.Symbol SOT-89 Pin Function 1 Gate 2 Drain 3 Source Part Number Package Brand KNS5610A SOT-89 KIA 1 of 5 Rev 1.1 JAN 2017 KIA 7A，100V N-CHANNEL MOSFET 5610A SEMICONDUCTORS 4. Absolute maximum ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current , VGS@10V 1 Symbol VDSS VGS Units V V IAS TJ ,TSTG -55 to150 ºC TC=25°C TC=100°C TA=25°C TA=100°C ID Pulsed drain current2 Power dissipation3 Rating 100 +20 7* 5.2 2 1.4 14 22.7 2 6 IDM TC=25°C TA=25°C PD Avalanche current Operating junction and storage temperature range A W A * Drain current limited by maximum junction temperature. 5. Thermal characteristics Parameter Symbol Typ Max Thermal resistance junction-case RθJC - 2.6 Thermal resistance junction-ambient RθJA - 48 2 of 5 Unit ºC/W Rev 1.1 JAN 2017 KIA 7A，100V N-CHANNEL MOSFET 5610A SEMICONDUCTORS 6. Electrical characteristics Parameter Drain-source breakdown voltage BVDSS temperature coefficient Symbol BVDSS △BVDSS/△TJ Drain-source on-resistance2 RDS(on) Gate threshold voltage VGS(TH) VGS(TH) temperature coefficient △VGS(TH) Drain-source leakage current IDSS Gate-source forward leakage IGSS Forward transconductance gfs Gate resistance Rg Total gate charge(10V) Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time tr Turn-off delay time td(off) Fall time Input capacitance Output capacitance Reverse transfer capacitance Continuous source current1,6 Maximum pulsed current2,6 tf Ciss Coss Crss IS ISM Diode forward voltage2 VSD Reverse recovery time trr Reverse recovery charge Note: Qrr (TJ=25°C,unless otherwise noted) Test Conditions Min Typ Max Units VGS=0V,ID=250μA 100 V Reference 25℃ ID=1mA - 0.098 - VGS=10V,ID=5A - 98 115 VGS=4.5V,ID=3A - 110 125 1.0 1.85 3.0 V - -4.57 - mV/ºC - - 1 - - 5 - - +100 nA - 13 - S - 1.8 - Ω - 26.2 - - 4.6 - - 5.1 - - 4.2 - - 8.2 - - 35.6 - - 9.6 1535 60 37 - 7 49 - - 1.3 - 37 - ns - 27.3 - nC VDS= VGS,ID=250uA VDS=80V, VGS=0V TJ=25°C VDS=80V, VGS=0V TJ=55°C VGS=+20V, VDS=0V VDS=5V, ID=10A VDS=0V, VGS=0V f=1MHz VDS=80V, ID=10A VGS=10V VDD=50V, ID=10A, RG=3.3Ω,VGS=10V VDS=15V,VGS=0V f=1MHz VD=VG=0V, Force current IS=1A, VGS=0V TJ=25°C IF=10A,dI/dt=100A/μs TJ=25°C 1. The data tested by surface mounted on a 1 inch2 board with 2OZ copper. 2. The data tested by pulsed, pulse width< 300μs, duty cycle < 2%. 3. The power dissipation is limited by 150 ºC junction temperature. 4. The min. value is 100% EAS tested guarantee. 5. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. 3 of 5 Rev 1.1 JAN 2017 V/ºC mΩ μA nC ns pF A V KIA 7A，100V N-CHANNEL MOSFET 5610A SEMICONDUCTORS 7.Typical operating characteristics 4 of 5 Rev 1.1 JAN 2017 KIA 7A，100V N-CHANNEL MOSFET 5610A SEMICONDUCTORS 5 of 5 Rev 1.1 JAN 2017