PPT89T30V5AE2M

PPT89T30V5AE2M Transistor Feature 2 - Collector 1 - Base ¾ This device is Pb-Free and RoHS compliant. ¾ PNP epitaxial planar silicon transistor 3 - Emitter Mechanical Characteristics ¾ Lead finish:100% matte Sn(Tin) ¾ Mounting position: Any ¾ Qualified max reflow temperature:260℃ ¾ Device meets MSL 1 requirements ¾ Pure tin plating: 7 ~ 17 um ¾ Pin flatness:≤3mil Absolute maximum rating@25℃ Parameter Symbol Value Units Collector-Emitter Breakdown Voltage V (BR)CEO -20 V Collector-Base Breakdown Voltage V (BR)CBO -30 V Emitter -Base Breakdown Voltage V (BR)EBO -6 V IC -5 A IC(Pulse) -10 A VCE(sat) -1 V PC 3 W Collector Current Collector-Emitter Saturation Voltage Collector power dissipation Rev.06 1 www.prisemi.com Transistor PPT89T30V5AE2M Electrical characteristics per line@25℃( unless otherwise specified) Parameter Symbol Conditions Min. Collector-Emitter Breakdown Voltage V (BR)CEO IC=-1.0mA,IB=0 -20 V Collector-Base Breakdown Voltage V (BR)CBO IC=-50uA,IE=0 -30 V Emitter -Base Breakdown Voltage V (BR)EBO IE=-50uA,IC=0 -6.0 V Emitter Cutoff Current IEBO VEB=-5V -500 nA Collector Cutoff Current ICBO VCB=-20V -500 nA VCE(sat) IC=-4A,IB=-100mA -1 V Transition frequency fT VCE=-6V,IE=50mA,f=100MHz 120 MHz Output capacitance Co VCB=-20V,IE=0A,f=1MHz 60 pF DC Current gain hFE VCE=-2V,IC=-0.5A Collector-Emitter Saturation Voltage - Typ. -0.3 100 Max. Units 400 Typical Characteristics hFE % Of Rated Power 100 VCE=1V 100 80 60 40 20 0 10 0.01 0.1 1 0 10 IC(A) Fig1.DC Current Gain 25 50 75 100 125 (°C) Fig2. Power Derating Curve VCE(SAT) VBE(SAT) (V) (V) 0.8 0.1 0.7 0.6 0.01 0.01 0.5 0.1 1 10 0.01 0.1 1 10 IC(A) IC(A) Fig 3.Collector-Emitter Saturation Voltage Rev.06 Fig4. Base-Emitter Saturation Voltage 2 www.prisemi.com Transistor PPT89T30V5AE2M Solder Reflow Recommendation Peak Temp=257℃, Ramp Rate=0.802deg. ℃/sec 280 240 200 160 120 80 40 0 0 60 30 90 120 150 180 240 210 270 300 330 360 390 420 450 480 Time (sec) Product dimension (SOT89-3L)( unit :mm) 4.5 1.6 1.5 0.5 2.5 4.0 1.0 (1) (2) (3) 0.4 0.4 0.5 0.4 1.5 1.5 3.0 Rev.06 (1) Base (2) Collector (3) Emitter 3 www.prisemi.com Transistor PPT89T30V5AE2M 1.73 0.41 4.6 0.95 1.47 1.3 0.6 1.5 Ordering information Device Package Shipping PPT89T30V5AE2M SOT89-3L (Pb-Free) 1000 / Tape & Reel Rev.06 4 www.prisemi.com Transistor PPT89T30V5AE2M IMPORTANT NOTICE and are registered trademarks of Prisemi Electronics Co., Ltd (Prisemi) ,Prisemi reserves the right to make changes without further notice to any products herein. Prisemi makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Prisemi assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in Prisemi data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. Prisemi does not convey any license under its patent rights nor the rights of others. The products listed in this document are designed to be used with ordinary electronic equipment or devices, Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. Website: http://www.prisemi.com For additional information, please contact your local Sales Representative. ©Copyright 2009, Prisemi Electronics is a registered trademark of Prisemi Electronics. All rights are reserved. Rev.06 5 www.prisemi.com