KIA5N50HD

KIA 5A，500V N-CHANNEL MOSFET 5N50H SEMICONDUCTORS 1. Features n RDS(on)=1.25Ω(typ) @Vgs=10V n RoHS compliant n Low on resistance n Low gate charge n Peak current vs pulse width curve 2. Applications n Adaptor n Charger n SMPS standby power 3.Symbol 1 of 8 Pin Function 1 Gate 2 Drain 3 Source Rev 1.1 JUN 2017 KIA 5A，500V N-CHANNEL MOSFET 5N50H SEMICONDUCTORS 4. Absolute maximum ratings Parameter （note*1） Drain-source voltage Continuous drain current （note*2） Pulsed drain current，VGS@10V Symbol Rating Units VDSS 500 V ID 5.0* A ID@100℃ Figure 3 A IDM Figure 6 A 100 W 0.8 W/℃ Power dissipation PD Derating factor above 25℃ Gate-source voltage VGS +20 V Single pulse Avalanche Engergy EAS 260 mJ Pulse avalanche rating IAS Figure 8 A dv/dt 5.0 V/ns TL 300 ºC TPKG 260 TJ ,TSTG -55 to150 （note*3） Peak diode recovery dv/dt Maximum temperature for soldering Leads at 0.063 in （ 1.6mm ） from case for 10 seconds package body for 10 seconds Operating junction and storage temperature range ºC *Drain current limited by maximum junction temperature Caution：Stresses greater than those listed in the”Absolute maximum ratings”table may cause permanent Damage to the device 5. Thermal characteristics Parameter Symbol Rating Unit Test condition Junction-ambient RθJA 62 ºC/W Junction-case RθJC 1.25 ºC/W 1 cubic foot chamber,free air Drain lead soldered to water cooled heatsink,PD adjusted for a peak junction temperature of +150℃ 2 of 8 Rev 1.1 JUN 2017 5A，500V N-CHANNEL MOSFET KIA 5N50H SEMICONDUCTORS 6. Electrical characteristics Parameter Symbol Drain-source breakdown voltage Breakdown voltage temperature coeffcient， BVDSS △BVDSS/△TJ Figure 11 (TJ=25°C,unless otherwise specified) Test Conditions Min Typ Max Units VGS=0V,IDS=250μA 500 Reference to 25℃ - - V V/℃ 0.61 ID=250uA VDS=500V, VGS=0V Drain-source leakage current IDSS - - 1 - - 100 VDS=VGS, ID=250μA 2.0 - 4.0 VGS=20V - - 1 VGS=-20V - - -1 - 1.25 1.5 Ω - 6 - S VDS=400V, VGS=0V TJ=125°C Gate threshold voltage,Figure 12 VGS(th) Gate-source forward leakage IGSS Gate-source reverse leakage VGS=10V,ID=2.5A Static drain-source on-resistance RDS(on) Figure 9 and 10 （note*4） μA V uA VDS=15V, ID=2.5A Forward transconductance gfs Input capacitance Ciss VDS=25V,VGS=0V - 525 - Output capacitance Coss f=1MHz - 64 - Reverse transfer capacitance Crss Figure 14 - 12 - Turn-on delay time td(on) - 9.0 - Rise time Turn-off delay time Fall time （note*4） tr VDD=250V, ID=5A, - 11 - td(off) RG=12Ω,VGS=10V - 30 - - 16 - - 14 - - 3.0 - - 6.0 - tf Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd VDD=250V, ID=5A, Figure 15 pF ns nC Continuous source current（body biode） IS Integral pn-diode in - - 5 Maximum pulsed current（body biode） ISM MOSFET - - 20 Diode forward voltage VSD IS=5A, VGS=0V - - 1.5 V Reverse recovery time trr IF=5A, VGS=0V - 400 - nS Reverse recovery charge Qrr di/dt=100A/μs - 1700 - nC A Note:1.TJ=25℃ to 150℃. 2.Repetitive rating;pulse width limited by maximum junction temperature 3.ISD=5A di/dt