SE4060GB

SE4060GB N-Channel Enhancement-Mode MOSFET Revision: A Features General Description Thigh Density Cell Design For Ultra Low On-Resistance Fully Characterized Avalanche Voltage and Current Improved Shoot-Through For a single MOSFET   VDS = 45V RDS(ON) = 7.5mΩ @ VGS=10V FOM  Simple Drive Requirement  Small Package Outline  Surface Mount Device Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS 45 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed ID 56 150 A Avalanche Energy Single Pulsed3 EAS 20 mJ Power Dissipation PD 62.5 W Operating Junction Temperature Range TJ -55 to 150 ℃ Thermal Resistance Symbol RθJA Parameter Junction to Ambient ShangHai Sino-IC Microelectronic Co., Ltd. SE4060G Units 50 ℃/W 1. SE4060GB Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage VGS=0 V, ID=250μA, IDSS Drain to Source Leakage Current VDS= 500V, VGS=0V IGSS Gate-Body Leakage Current VGS=30V VGS(th) Gate Threshold Voltage VDS= VGS, ID=250μA RDS(ON) Static Drain-Source On-Resistance gFS Transconductance 45 V 1 μA 100 nA 1.55 2.2 V VGS=10V, ID=20A 7.5 9.5 VGS=4.5V, ID=10A 10 14 VDS=5V, ID=20A 25 S 942 pF 309 pF 29 pF 14.5 nC 2 nC 2.5 nC 1.0 mΩ DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=20V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=20V, Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time VDS=20V, RGEN=10Ω 6 ns td(off) Turn-Off Delay Time ID=10A 21 ns td(r) Turn-On Rise Time 5 ns td(f) Turn-Off Fall Time 5 ns ID=10A Source-Drain Diode Characteristics VSD trr QRR Drain-Source Diode Forward Voltage VGS=0V,IS=20A 0.9 Reverse Recovery Time VGS=0V,IS=10A 24 ns 19 nC Reverse Recovery Charge ShangHai Sino-IC Microelectronic Co., Ltd. dIF/dt=100A/μs 1 1.2 V 2. SE4060GB Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE4060GB Typical Characteristics ShangHai Sino-IC Microelectronic Co., Ltd. 4. SE4060GB Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 5. SE4060GB Package Outline Dimension TO-251 ShangHai Sino-IC Microelectronic Co., Ltd. 6. The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: szrxw002@126.com Website: http://www.sino-ic.net ShangHai Sino-IC Microelectronic Co., Ltd. 7.