SE20P03

SE20P03 P-Channel MOSFET Revision: A General Description Features This series is a high voltage power MOSFET For a single MOSFET  such as fast switching time, low gate charge,  and is designed to have better characteristics, VDS = -30V RDS(ON) = 50mΩ @ VGS=-10V low on-state resistance and have a high rugged avalanche characteristics Pin configurations See Diagram below Absolute Maximum Ratings Parameter Symbol Rating Units Drain-Source Voltage VDS -30 V Gate-Source Voltage VGS ±20 V Drain Current Continuous Pulsed -19 ID A -57 Power Dissipation PD 30 W Operating Junction Temperature Range TJ -55 to 150 ℃ Thermal Resistance Symbol RθJA Parameter Junction to Ambient ShangHai Sino-IC Microelectronic Co., Ltd. Typ Max Units 71.4 ℃/W 1. SE20P03 Electrical Characteristics Symbol (TJ=25℃ unless otherwise noted) Parameter Test Conditions Min Typ Max Units OFF CHARACTERISTICS (Note 2) BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=-250μA IDSS Drain to Source Leakage Current VDS= -30V, VGS=0V -10 μA IGSS Gate-Body Leakage Current VGS=20V 100 nA VGS(th) Gate Threshold Voltage VDS= VGS, ID=-250μA -3 V RDS(ON) Static Drain-Source On-Resistance VGS=-10V, ID=-10A 50 mΩ VGS=-4.5V, ID=-5A 90 mΩ gFS Forward Transconductance VDS=-8V, ID=-9.5A -30 V -1 6 S 750 pF 345 pF 110 pF DYNAMIC PARAMETERS Ciss Input Capacitance VGS=0V, VDS=-25V, Coss Output Capacitance Crss Reverse Transfer Capacitance f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 2 Qgs Gate Source Charge Qgd Gate Drain Charge td(on) Turn-On Delay Time td(off) Turn-Off Delay Time td(r) td(f) 15 VGS=-5V, VDS=-24V, 21 nC 3.4 nC 9.7 nC VDS=-15V, RGEN=3.3Ω 16 ns ID=-19A 25 ns Turn-On Rise Time 125 ns Turn-Off Fall Time 68 ns ID=-19A Source-Drain Diode Characteristics VSD Drain-Source Diode Forward Voltage VGS=0V,IS=-19A -3.4 V IS Continuous Source Current VG=VD=0V, -19 A ISM Pulsed Source Current Force Current -57 A ShangHai Sino-IC Microelectronic Co., Ltd. 2. SE20P03 Package Outline Dimension TO-252 ShangHai Sino-IC Microelectronic Co., Ltd. 3. SE20P03 Package Outline Dimension TO-251 The SINO-IC logo is a registered trademark of ShangHai Sino-IC Microelectronics Co., Ltd. © 2005 SINO-IC - Printed in China - All rights reserved. SHANGHAI SINO-IC MICROELECTRONICS CO., LTD Add: Building 3, Room 3401-03, No.200 Zhangheng Road, ZhangJiang Hi-Tech Park, Pudong, Shanghai 201203, China Phone: +86-21-33932402 33932403 33932405 33933508 33933608 Fax: +86-21-33932401 Email: webmaster@sino-ic.com Website: http://www.sino-ic.com ShangHai Sino-IC Microelectronic Co., Ltd. 4.