18N20-252

GOFORD 18N20 Description Features • VDSS RDS(ON) ID 0.136Ω 18A @ 10V (typ) 200V • Fast switching • 100% avalanche tested TO-251 • Improved dv/dt capability TO-252 Application • DC-DC & DC-AC Converters for telecom, industrial and consumer environment • Uninterruptible Power Supply (UPS) • Switch Mode Low Power Supplies • Industrial Actuators Absolute Maximum Ratings TC=25℃ Symbol unless otherwise specified Max. Parameter TO-220 TO-251 TO-252 Units VDSS Drain-Source Voltage 200 V VGSS Gate-Source Voltage ± 30 V ID Continuous Drain Current IDM EAS dv/dt PD Pulsed Drain Current TC = 25℃ 18 18* 18* A TC = 100℃ 11.45 11.45* 11.45* A 72 72* 72* A note1 Single Pulsed Avalanche Energy Peak Diode Recovery Energy note2 note3 320 mJ 8 V/ns Power Dissipation TC = 25℃ 110 65.8 65.8 W Linear Derating Factor TC > 25℃ 0.89 0.53 0.53 W/℃ 1.12 1.9 1.9 ℃/W RθJC Thermal Resistance, Junction to Case TJ, TSTG Operating and Storage Temperature Range -55 to +150 ℃ *Drain current limited by maximum junction temperature HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 1 GOFORD 18N20 Electrical Characteristics TC=25℃ Symbol unless otherwise specified Parameter Test Condition Min. Typ. Max. Units VGS = 0V,ID = 250Μa 200 - - V - 0.3 - V/℃ VDS = 200V, VGS = 0V - - 1 µA VDS = 160V, TC = 125℃ - - 10 µA VDS = 0V, VGS = ±20V - - ±100 nA Off Characteristic V(BR)DSS Drain-Source Breakdown Voltage △V(BR)DSS Breakdown Voltage Temperature Reference to 25℃, /△TJ Coefficient ID = 250µA IDSS Zero Gate Voltage Drain Current IGSS Gate to Body Leakage Current On Characteristics VGS(th) Gate Threshold Voltage note4 VDS = VGS, ID = 250µA 1 - 3 V RDS(on) Static Drain-Source On-Resistance VGS =10V, ID = 9A - 0.136 0.16 Ω gFS Forward Transconductance VDS =30V, ID = 9A - 8 - S - 836 - pF - 81.2 - pF - 3.81 - pF - 17.7 - nC - 3.9 - nC - 5.2 - nC - 12.3 - ns Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain(“Miller”) Charge VDS = 25V, VGS = 0V, f = 1.0MHz VDD = 160V, ID = 18A, VGS = 10V Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time VDD = 100V, ID = 18A, - 21.1 - ns td(off) Turn-Off Delay Time RG = 5Ω, VGS = 10V - 22.5 - ns tf Turn-Off Fall Time - 7.7 - ns Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain to Source Diode Forward Current - - 18 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 72 A VSD Drain to Source Diode Forward Voltage VGS = 0V, IS = 9A - - 1.5 V trr Reverse Recovery Time VGS = 0V, IF = 18A, - 235 - ns Qrr Reverse Recovery Charge di/dt =100A/µs - 1045 - nC Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 10mH, IAS = 8A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 18A, di/dt ≤ 200A/µs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse width ≤ 300µs; duty cycle ≤ 2%. HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 2 GOFORD 18N20 Typical Performance Characteristics 40 60 VGS = 10.0V 7.5V 5.0V 4.5V 4.0V 3.5V 3.0V 2.5V 40 30 25℃ 30 ID,Drain Current,A ID,Drain Current,A 50 PULSED TEST VDS = 30V 35 20 25 150℃ 20 15 10 10 5 0 0 10 20 0 30 0 2 VDS,Drain-to-Source Voltage,V 4 6 8 10 VGS,Gate-to-Source Voltage,V Figure 1. Output Characteristics Figure 2. Transfer Characteristics 0.20 PULSED TEST VGS = 0V 0.18 ISD,Reverse Drain Current,A RDS(on) ,Drain-to-Source On Resistance,Ω PULSED TEST VGS = 10V 0.16 0.14 0.12 VGS = 20V 0.10 0 5 10 15 20 25 30 35 10 150℃ 25℃ 1 0.1 40 0.3 0.5 ID,Drain Current,A 0.7 0.9 1.1 VSD,Source-to-Drain Voltage,V Figure 3. Drain-to-Source On Resistance vs. Figure 4. Body Diode Forward Voltage vs. Drain Current and Gate Voltage Source Current and Temperature 10 VDS = 160V VDS = 100V VDS = 40V 1000 VGS,Gate-to-Source Voltage,V Capacitance,pF Ciss 100 Coss 10 f = 1MHz Ciss = Cgs+Cgd Coss = Cds+C gd Crss = Cgd 8 6 4 2 ID = 18A Crss 1 0 0.1 1 10 100 0 2 4 VDS,Drain-to-Source Voltage,V Figure 5. Capacitance Characteristics 6 8 10 12 14 16 18 20 QG,Total Gate Charge,nC Figure 6. Gate Charge Characteristics HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 3 GOFORD 18N20 3 1.2 e g ta l o ) V 1.1 d n e w zi o l d a k m r a r o e 1 B N ,( e S c S ru Do V S B - 0.9 to in a r D PULSED TEST VGS = 10V ID = 9A RDS(on),(Normalized) Drain-to-Source On Resistance 2.5 2 1.5 1 0.5 0.8 -100 -50 0 50 100 150 0 -100 200 -50 TJ,Junction Temperature(℃ ℃) 0 50 100 150 200 TJ,Junction Temperature(℃) Figure 7. Normalized Breakdown Voltage vs. Figure 8. Normalized On Resistance vs. Junction Temperature Junction Temperature 20 18 100 10µs 16 100µs 1ms 10ms 1 DC Operation in This Area is Limited by RDS(on) 0.1 14 ID,Drain Current,A ID,Drain Current,A 10 8 6 2 TJ=150℃ 0 0.01 10 10 4 SINGLE PULSE TC=25℃ 1 12 0 100 25 50 VDS,Drain-to-Source Voltage,V ZθJC,Transient Thermal Impedance,℃/W Figure 9. Maximum Safe Operating Area 75 100 125 150 TC,Case Temperature,℃ Figure 10. Maximum Continuous Drain Current vs. Case Temperature 1 D=0.50 0.20 0.10 0.1 0.05 0.02 0.01 Notes: 1.Duty Factor D = t1/t2 2.Peak Tj = Pdm x Zthjc + Tc SINGLE PULSE (THERMAL RESPONSE) 0.01 1.0E-05 1.0E-04 1.0E-03 1.0E-02 t,Pulse Duration,s 1.0E-01 1.0E+00 1.0E+01 Figure 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 4 GOFORD 18N20 Figure 12. Gate Charge Test Circuit & Waveform Figure 13. Resistive Switching Test Circuit & Waveforms Figure 14. Unclamped Inductive Switching Test Circuit & Waveforms HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 5 GOFORD 18N20 Figure 15. Peak Diode Recovery dv/dt Test Circuit & Waveforms (For N-channel) HTTP://www.gofordsemi.com TEL：0755-29961262 FAX：0755-29961466 Page 6