ME20N03

ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET GENERAL DESCRIPTION FEATURES The ME20N03 is the N-Channel logic enhancement mode power ● RDS(ON) ≦15mΩ@VGS=10V field effect transistors are produced using high cell density, DMOS ● RDS(ON) ≦20mΩ @VGS=4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low RDS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits where high-side switching, and low in-line power loss are needed in a APPLICATIONS very small outline surface mount package. ● Power Management in Desktop Computer ● Video Graphic Accelerate Card ● Battery Powered System ● DC/DC Converter PIN CONFIGURATION (TO-252) Top View * The Ordering Information: ME20N03 (Pb-free) ME20N03-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 30 V Gate-Source Voltage VGS ±20 V Parameter Continuous Drain Current TC=25℃ TC=70℃ Pulsed Drain Current Maximum Power Dissipation IDM TC=25℃ TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case Note 1: Bonding wire current limit Note 2: The device mounted on 1in2 FR4 board with 2 oz copper Note 1: Bonding wire current limit Mar,2016-Ver2.2 ID PD 39 32 159 37 24 A A W TJ -55 to 150 ℃ RθJC 3.3 ℃/W D CC 正式發行 01 ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ Max Unit BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate-Body Leakage Current VDS=0V, VGS=±20V ±100 nA IDSS Zero Gate Voltage Drain Current VDS=30V, VGS=0V 1 μA RDS(ON) Drain-Source On-State Resistance STATIC VSD V 3 VGS=10V, ID= 15A 11 15 VGS=4.5V, ID= 15A 16 20 0.75 1.1 Diode Forward Voltage IS=1A, VGS=0V Qg Total Gate Charge VDS=15V, VGS=10V,ID=15A Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 4.2 Ciss Input Capacitance 700 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time mΩ V DYNAMIC 18 9 nC Turn-On Rise Time tr VDS=15V,VGS=4.5V,ID=15A VDS=15V, VGS=0V, f =1MHz 4.2 120 pF 35 13.8 VDS=15V, RL =1.5Ω 178 VGS=10V, RG=6Ω td(off) Turn-Off Delay Time tf Turn-Off Fall Time ID=15A ns 28.7 8.8 Notes: a. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. b, Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. D CC 正式發行 Mar,2016-Ver2.2 02 ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Mar,2016-Ver2.2 03 ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET Typical Characteristics (TJ =25℃ Noted) D CC 正式發行 Mar,2016-Ver2.2 04 ME20N03/ ME20N03-G N-Channel 30V Enhancement MOSFET TO-252 Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P 2.30 BSC D CC 正式發行 Mar,2016-Ver2.2 05