ME60N03

ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g GENERAL DESCRIPTION FEATURES The ME60N03 is the N-Channel logic enhancement mode power ● RDS(ON)≦8.5mΩ@VGS=10V field effect transistors are produced using high cell density DMOS ● RDS(ON)≦13mΩ@VGS=4.5V trench technology. This high density process is especially tailored to ● Super high density cell design for extremely low R DS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as LCD inverter, computer power capability management and DC to DC converter circuits which need low in-line APPLICATIONS ● Power Management power loss. ● DC/DC Converter ● LCD TV & Monitor Display inverter ● CCFL inverter ● Secondary Synchronous Rectification PIN CONFIGURATION (TO-252-3L) Top View * The Ordering Information: ME60N03 (Pb-free) ME60N03-G (Green product-Halogen free) Absolute Maximum Ratings (TA=25℃ Unless Otherwise Noted) Parameter Symbol Limit Unit Drain-Source Voltage VDSS 30 V Gate-Source Voltage VGSS ±20 V 48.5 A 60.6 A TC=25℃ Continuous Drain Current TC=70℃ Pulsed Drain Current ID IDM TC=25℃ Maximum Power Dissipation TC=70℃ Operating Junction and Storage Temperature Range Thermal Resistance-Junction to Case *The device mounted on 1in2 FR4 board with 2 oz copper Jan.2016-Ver 4.4 PD 50 32 TJ, Tstg -55 to 150 RθJC 2.5 W ℃ D CC ℃/W 正式發行 01 ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g Electrical Characteristics (TA =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min Typ BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 30 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate-Body Leakage IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance Max Unit STATIC VSD Diode Forward Voltage V 1.6 3 V VDS=0V, VGS=±20V ±100 nA VDS=24V, VGS=0V 1 μA VGS=10V, ID=30A 6.5 8.5 VGS=4.5V, ID=20A 10 13 0.87 1.5 IS=20A, VGS=0V mΩ V DYNAMIC Qg Total Gate Charge 22 Qgs Gate-Source Charge Qgd Gate-Drain Charge 4 Ciss Input Capacitance 1219 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDS=15V, VGS=10V, ID=35A VDS=15V, VGS=0V,f=1MHz 4.5 nC 182 pF 88 13 VDS=15V,VGS =10V RG=24Ω,RL=15Ω, ID=1A 10 ns 46 7 Note: a.Pulse test: pulse width＜=300us, duty cycle＜=2％ b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Jan.2016-Ver 4.4 02 ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET Typical Characteristics (TJ =25℃ Noted) -g DCC 正式發行 Jan.2016-Ver 4.4 03 ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Jan.2016-Ver 4.4 04 ME60N03/ME60N03-G 30V N-Channel Enhancement Mode MOSFET -g TO-252-3L Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P Jan.2016-Ver 4.4 2.30 BSC DCC 正式發行 05