ME12P04

* ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME12P04 is the P-Channel logic enhancement mode power field ● RDS(ON)≦45mΩ@VGS=-10V effect transistors are produced using high cell density, DMOS trench ● RDS(ON)≦80mΩ@VGS=-4.5V technology. This high density process is especially tailored to ● Super high density cell design for extremely low R DS(ON) minimize on-state resistance. These devices are particularly suited ● Exceptional on-resistance and maximum DC current for low voltage application such as cellular phone and notebook capability computer power management and other battery powered circuits APPLICATIONS where high-side switching, and low in-line power loss are needed in a ● Power Management in Note book ● Portable Equipment very small outline surface mount package. ● Battery Powered System ● DC/DC Converter PIN ● Load Switch ● LCD Display inverter CONFIGURATION (TO-252-3L) Top View The Ordering Information: ME12P04 (Pb-free) ME12P04-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS -40 V Gate-Source Voltage VGS ±25 V Parameter TC=25℃ Continuous Drain Current TC=70℃ Pulsed Drain Current ID IDM TC=25℃ Maximum Power Dissipation TC=70℃ Operating Junction Temperature Thermal Resistance-Junction to Case* PD -18.6 -15 -75 25 16 A A W TJ -55 to 150 ℃ RθJC 5 ℃/W *The device mounted on 1in2 FR4 board with 2 oz copper DCC 正式發行 Dec, 2015-Ver2.2 01 ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min VGS=0V, ID=-250μA -40 -1 Typ Max Unit STATIC V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage VDS=VGS, ID=-250μA IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-State Resistance VSD V -1.9 -3 V VDS=0V, VGS=±25V ±100 nA VDS=-40V, VGS=0V -1 μA VGS=-10V, ID= -12A 35 45 VGS=-4.5V, ID= -6A 57 80 Diode Forward Voltage IS=-1.7A, VGS=0V -0.78 -1.2 Qg Total Gate Charge VDS=-20V, VGS=-10V, ID=-12A 20.3 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 4.3 Ciss Input capacitance 921 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) tr td(off) Turn-On Delay Time tf Turn-Off Fall Time a mΩ V DYNAMIC 9.8 nC Turn-On Rise Time Turn-Off Delay Time VDS=-20V, VGS=-4.5V, ID=-12A VDS=-20V, VGS=0V, F=1MHz 5 91 pF 78 35.3 VDS=-15V, RL =15Ω VGS=-10V, RG=6Ω ID=-1A, 56 ns 15.6 8.2 Notes:a. Pulse test; pulse width ≦ 300us, duty cycle≦ 2% b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Dec, 2015-Ver2.2 02 ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Dec, 2015-Ver2.2 03 ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Dec, 2015-Ver2.2 04 ME12P04/ME12P04-G P- Channel 40-V (D-S) MOSFET TO-252-3L Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P Dec, 2015-Ver2.2 2.30 BSC DCC 正式發行 05