HD70N08

HD70N08_HU70N08 Dec 2006 BVDSS = 80V RDS(on) typ =8.5m Ω HD70N08 / HU70N08 ID = 70 A 80V N -Channel MOSFET TO-252 TO-251 FEATURES  Originative New Design HD70N08  Superior Avalanche Rugged Technology  Robust Gate Oxide Technology HU70N08 1.Gate 2. Drain 3. Source  Very Low Intrinsic Capacitances  Excellent Switching Characteristics  Unrivalled Gate Charge : 22 nC (Typ.)  Extended Safe Operating Area  Lower RDS(ON) : 8.5mΩ (Typ.) @VGS=10V  100% Avalanche Tested Absolute Maximum Ratings Symbol TC=25℃ unless otherwise specified Parameter Value Units 80 V VDSS Drain-Source Voltage ID Drain Current – Continuous (TC = 25℃) 70 A Drain Current – Continuous (TC = 100℃) 50A A IDM Drain Current – Pulsed 280 A VGS Gate-Source Voltage ±20 V EAS Single Pulsed Avalanche Energy (Note 2) 230 mJ IAR Avalanche Current (Note 1) 28 A EAR Repetitive Avalanche Energy (Note 1) 20 mJ dv/dt Peak Diode Recovery dv/dt (Note 3) 5.8 V/ns PD Power Dissipation (TC = 25℃) - Derate above 25℃ 200 W TJ, TSTG Operating and Storage Temperature Range TL Maximum lead temperature for soldering purposes, 1/8” from case for 5 seconds (Note 1) 1.3 W/℃ -55 to +150 ℃ 300 ℃ Thermal Resistance Characteristics Typ. Max. RθJC Symbol Junction-to-Case Parameter -- 0.85 RθCS Case-to-Sink 0.5 -- RθJA Junction-to-Ambient -- 62.5 Units ℃/W 1/7 HD70N08 / HU70N08 80VDS／±25VGS／70A(ID) N-Channel Enhancement Mode MOSFET Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol VDSS VGSS ID IDP IS TJ TSTG Parameter Drain-Source Voltage Gate –Source Voltage TC=100°C Continuous Drain Current 300us Pulsed Drain Current Tested Diode Continuous Forward Current Operating Junction Temperature Storage Temperature Range TC=25°C Typical 80 ±25 50 70 280 70 175 -55 ~ 175 Unit V V A A A A °C °C Electrical Characteristics (TA=25°C Unless otherwise noted) Symbol Parameter Test Conditions Static Characteristics BVDSS Drain-Source Breakdown Voltage VGS=0V,ID=250uA Min. Zero Gate Voltage Drain Current VGS(th) Gate Threshold Voltage IGSS Gate Leakage Current 1 RDS(on) Drain-Source On-Resistance Diode Characteristics VSD1 Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Dynamic Characteristics2 RG Gate Resistance Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Gate Charge Characteristics2 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge Max. Unit 80 ΔBVDSS/ΔTJ Breakdown Voltage Temp. Coe IDSS Typ V 0.073 VDS=-24V,VGS=0V TJ=85°C VDS=VGS,ID=-250uA VGS=±25V, VDS=0V VGS=10V, ID=40A 2 3 8 ISD=20A,VGS=0V ISD=40A, dISD/dt=100A/us 0.8 50 90 VGS=0V, VDS=0V, Frequency=1MHz 1.3 VGS=0V, VDS=30V Frequency=1MHz VDD=30V,RL=30Ω ID=1A,VGEN=10V RG=6Ω VDS=40V,VGS=10V ID=40A 1 30 4 ±100 10 1.3 uA V nA mΩ V ns nC Ω 3000 350 250 22 14 58 25 4200 77 22 23 108 pF 40 25 104 45 ns nC Note: 1: Pulse test ; pulse width ≦ 300ns, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 2/7 HD70N08 / HU70N08 80VDS／±25VGS／70A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics 3/7 HD70N08 / HU70N08 80VDS ±25VGS／70A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics (Cont.) 4/7 HD70N08 / HU70N08 80VDS／±25VGS／70A(ID) N-Channel Enhancement Mode MOSFET Typical Characteristics (Cont.) 5/7 HD70N08 / HU70N08 Package Dimension TOTO -252 2.3±0.1 6.6±0.2 1.2±0.3 9.7+0.5 -0.3 2.7±0.3 0.5±0.05 5.6±0.2 1±0.2 5.35±0.15 1.2±0.3 0.05+0.1 -0.05 0.8±0.2 0.6±0.2 2.3typ 2 3typ 2.3typ 0.5+0.1 -0.05 Package Dimension TOTO -251 6.6±0.2 2.3±0.1 0.8±0.15 0.6±0.1 2.3typ 2 3typ 2.3typ 7.8±0 ±0.4 ± 0.3 7.5 0.75±0.15 7±0.2 0.5±0.05 5.6±0.2 5.35±0.15 0.5+0.1 -0.05 1.2±0.3