ME15N10-G

* ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET GENERAL DESCRIPTION FEATURES The ME15N10 is the N-Channel logic enhancement mode power ● RDS(ON)≦100mΩ@VGS=10V field effect transistors, using high cell density, DMOS trench ● Super high density cell design for extremely low R DS(ON) technology. This high density process is especially tailored to ● Exceptional on-resistance and maximum DC current minimize on state resistance. These devices are particularly suited for low voltage application such as cellular phone, notebook computer power management and other battery powered circuits, and low in-line power loss that are needed in a very small outline surface mount package. PIN capability APPLICATIONS ● Power Management in Note book ● DC/DC Converter ● Load Switch ● LCD Display inverter CONFIGURATION (TO-252-3L) Top View The Ordering Information: ME15N10 (Pb-free) ME15N10-G (Green product-Halogen free) Absolute Maximum Ratings (TC=25℃ Unless Otherwise Noted) Symbol Maximum Ratings Unit Drain-Source Voltage VDS 100 V Gate-Source Voltage VGS ±20 V Parameter TC=25℃ Continuous Drain Current TC=70℃ Pulsed Drain Current ID TC=25℃ TC=70℃ Junction and Storage Temperature Range Thermal Resistance-Junction to Case * The * A 13.6 IDM Maximum Power Dissipation 14.7 PD 59 34.7 22.2 A W TJ, Tstg -55 to 150 ℃ RθJC 3.6 ℃/W 2 * The device mounted on 1in FR4 board with 2 oz copper DCC 正式發行 Dec, 2015-Ver1.4 01 ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET Electrical Characteristics (TC =25℃ Unless Otherwise Specified) Symbol Parameter Limit Min BVDSS Drain-Source Breakdown Voltage VGS=0V, ID=250μA 100 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250μA 1 IGSS Gate Leakage Current IDSS Zero Gate Voltage Drain Current RDS(ON) Drain-Source On-Resistance VSD Typ Max Unit STATIC a V 3 V VDS=0V, VGS=±20V ±100 nA VDS=80V, VGS=0V 1 μA VGS=10V, ID= 8A 80 100 mΩ Diode Forward Voltage IS=8A, VGS=0V 0.9 1.2 V Qg Total Gate Charge VDS=80V, VGS=10V, ID=10A 24 Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge 7.6 Ciss Input Capacitance 882 Coss Output Capacitance Crss Reverse Transfer Capacitance td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time DYNAMIC 13 VDS=80V, VGS=4.5V, ID=10A VDS=15V, VGS=0V,f=1MHz nC 4.6 57 pF 44 VDS=50V, RL =5Ω, VGS=10V, RG=1Ω ID=1A 14 33 ns 39 5 Notes: a. Pulse test: pulse width≦ 300us, duty cycle≦ 2%, Guaranteed by design, not subject to production testing. b. Matsuki Electric/ Force mos reserves the right to improve product design, functions and reliability without notice. DCC 正式發行 Dec, 2015-Ver1.4 02 ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Dec, 2015-Ver1.4 03 ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET Typical Characteristics (TJ =25℃ Noted) DCC 正式發行 Dec, 2015-Ver1.4 04 ME15N10/ME15N10-G N-Channel 100-V (D-S) MOSFET TO252-3L Package Outline TO-252 Package Outline SYMBOL MIN MAX A 2.10 2.50 B 0.40 0.90 C 0.40 0.90 D 5.30 6.30 D1 2.20 2.90 E 6.30 6.75 E1 4.80 5.50 L1 0.90 1.80 L2 0.50 1.10 L3 0.00 0.20 H 8.90 10.40 P 2.30 BSC DCC 正式發行 Dec, 2015-Ver1.4 05