LSE55R140GT

LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Lonten N-channel 550V, 23A, 0.14Ω LonFETTM Power MOSFET Description Product Summary LonFET VDS @ Tj,max 600V RDS(on),max 0.14Ω device has extremely low on resistance, making it IDM 69A especially suitable for applications which require Qg,typ 40nC TM Power MOSFET is fabricated using advanced super junction technology. The resulting superior power density and outstanding efficiency. Features  Ultra low RDS(on)  Ultra low gate charge (typ. Qg = 40nC)  100% UIS tested  RoHS compliant TO-247 TO-220MF TO-263 TO-262 D Applications G  Power faction correction (PFC).  Switched mode power supplies (SMPS).  Uninterruptible power supply (UPS). S N-Channel MOSFET Pb Absolute Maximum Ratings Parameter Value Unit VDSS 550 V ID 23 A 15 A 69 A VGSS ±30 V Avalanche energy, single pulse 2) EAS 600 mJ Avalanche energy, repetitive 3) EAR 0.4 mJ Avalanche current, repetitive 3) IAR 23 A 205 W 1.64 W/°C 34 W 0.28 W/°C 50 Ncm -55 to +150 °C Drain-Source Voltage Continuous drain current ( TC = 25°C ) Symbol ( TC = 100°C ) Pulsed drain current IDM 1) Gate-Source voltage Power Dissipation TO-247/TO-263/TO-262 ( TC = 25°C ) - Derate above 25°C PD Power Dissipation TO-220MF ( TC = 25°C ) - Derate above 25°C Mounting torque To-220MF ( M2.5 screws ) Operating and Storage Temperature Range TJ, TSTG Continuous diode forward current IS 23 A Diode pulse current IS,pulse 69 A Version 2.2,Sep-2019 1 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Thermal Characteristics TO-247/TO-263/TO-262 Parameter Symbol Value Unit Thermal Resistance, Junction-to-Case RθJC 0.61 °C/W Thermal Resistance, Junction-to-Ambient RθJA 60 °C/W Tsold 260 °C Value Unit Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Thermal Characteristics TO-220MF Parameter Symbol Thermal Resistance, Junction-to-Case RθJC 3.6 °C/W Thermal Resistance, Junction-to-Ambient RθJA 80 °C/W Tsold 260 °C Soldering temperature, wavesoldering only allowed at leads. (1.6mm from case for 10s) Package Marking and Ordering Information Device Device Package Marking Units/Tube LSB55R140GT TO-247 LSB55R140GT 30 LSD55R140GT TO-220MF LSD55R140GT 50 LSE55R140GT TO-263 LSE55R140GT LSF55R140GT TO-262 LSF55R140GT Electrical Characteristics Parameter Units/Real 800 50 Tc = 25°C unless otherwise noted Symbol Test Condition Min. Typ. Max. Unit Static characteristics Drain-source breakdown voltage BVDSS VGS=0 V, ID=0.25 mA 550 - - V Gate threshold voltage VGS(th) VDS=VGS, ID=0.25 mA 2.5 3.5 4.5 V Drain cut-off current IDSS VDS=550 V, VGS=0 V, μA Tj = 25°C - - 1 Tj = 125°C - 10 - Gate leakage current, Forward IGSSF VGS=30 V, VDS=0 V - - 50 nA Gate leakage current, Reverse IGSSR VGS=-30 V, VDS=0 V - - -50 nA Drain-source on-state resistance RDS(on) VGS=10 V, ID=11.5 A - Tj = 25°C - 0.11 0.14 Ω Tj = 150°C - 0.29 - Gate resistance RG f=1 MHz, open drain - 4.5 - Input capacitance Ciss VDS = 100 V, VGS = 0 V, - 1730 - Output capacitance Coss f = 250 kHz - 76.2 - Reverse transfer capacitance Crss - 4.1 - Turn-on delay time td(on) VDD = 400 V, ID = 11.5 A - 19 - Rise time tr RG = 10 Ω, VGS=10 V - 27 - Turn-off delay time td(off) - 99 - Fall time tf - 10 Ω Dynamic characteristics Version 2.2,Sep-2019 2 pF ns - www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Gate charge characteristics Gate to source charge Qgs VDD=400 V, ID=11.5 A, - 10 - Gate to drain charge Qgd VGS=0 to 10 V - 14 - Gate charge total Qg - 40 - Gate plateau voltage Vplateau - 5.5 - V nC Reverse diode characteristics Diode forward voltage VSD VGS=0 V, IF=11.5 A - 1.0 - V Reverse recovery time trr VR=50 V, IF=23 A, - 363 - ns Reverse recovery charge Qrr dIF/dt=100 A/μs - 4 - μC Peak reverse recovery current Irrm - 21 - A Notes: 1. Limited by maximum junction temperature, maximum duty cycle is 0.75. 2. IAS = 5A, VDD =60V, Starting Tj= 25°C. 3. Repetitive Rating: Pulse width limited by maximum junction temperature. Version 2.2,Sep-2019 3 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Electrical Characteristics Diagrams Figure 1. On-Region Characteristics Common Source Tc = 25°C Pulse test Figure 2. Transfer Characteristics VGS=10V Common Source Tc = 25°C VDS=20 V Pulse test VGS=7V VGS=6.5V VGS=6V VGS=5.5V Drain−source voltage VDS (V) Gate−source voltage VGS (V) Figure 3. On-Resistance Variation vs. Drain Current Figure 4. Threshold Voltage vs. Temperature VGS = 10 V Tc = 25°C Pulse test IDS=0.25 mA Pulse test Drain current ID (A) Junction temperature Tj (°C) Figure 5. Breakdown Voltage vs. Temperature Figure 6. On-Resistance vs. Temperature VGS=0 V IDS=0.25 mA Pulse test VGS=10 V IDS=11.5 A Pulse test Junction temperature Tj (°C) Junction temperature Tj (°C) Version 2.2,Sep-2019 4 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Figure 7. Capacitance Characteristics Figure 8. Gate Charge Characterist Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd Ciss Coss Notes: f = 250 kHz VGS=0 V ID = 10 A Crss Total Gate Charge QG (nC) Drain-Source Voltage VDS (V) Figure 9.1 Maximum Safe Operating Area Figure 9.2 Maximum Safe Operating Area TO-220MF TO-247/TO-263/TO-262 Limited by RDS(on) 10us Limited by RDS(on) 1ms 10us 100us 100us 1ms DC DC Notes: T = 25°C Notes: T = 25°C c c T = 150°C j Single Pulse T = 150°C j Single Pulse Drain-Source Voltage VDS (V) Drain-Source Voltage VDS (V) Figure 10.1 Power Dissipation vs. Temperature Figure 10.2 Power Dissipation vs. Temperature TO-220MF TO-247/TO-263/TO-262 Case temperature Tc (°C) Case temperature Tc (°C) Version 2.2,Sep-2019 5 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Figure 11.1 Transient Thermal Response Curve TO-220MF Pulse Width t (s) Figure 11.1 Transient Thermal Response Curve TO-247/TO-263/TO-262 Pulse Width t (s) Version 2.2,Sep-2019 6 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Test Circuit & Waveform Gate Charge Test Circuit & Waveform Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms Version 2.2,Sep-2019 7 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Mechanical Dimensions for TO-247 mm SYMBOL MIN NOM MAX A 4.80 5.00 5.20 A1 2.21 2.41 2.59 A2 1.85 2.00 2.15 b 1.11 1.21 1.36 b2 1.91 2.01 2.21 b4 2.91 3.01 3.21 c 0.51 0.61 0.75 D 20.80 21.00 21.30 D1 16.25 16.55 16.85 E 15.50 15.80 16.10 E1 13.00 13.30 13.60 E2 4.80 5.00 5.20 E3 2.30 2.50 2.70 e 5.44BSC L 19.82 19.92 20.22 L1 — — 4.30 ØP 3.40 3.60 3.80 ØP1 — — 7.30 S 6.15BSC TO-247 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code Lonten LSB55R140GT ABYWW99 Part Number “99” Manufacturing Code “YWW” Date Code Version 2.2,Sep-2019 8 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Mechanical Dimensions for TO-220MF COMMON DIMENSIONS MM SYMBOL INCH MIN NOM MAX MIN NOM MAX E 9.96 10.16 10.36 0.392 0.400 0.408 A 4.50 4.70 4.90 0.177 0.185 0.193 A1 2.34 2.54 2.74 0.092 0.100 0.108 A2 0.30 0.45 0.60 0.012 0.002 0.024 A4 2.65 2.76 2.96 0.104 0.109 0.117 C 0.40 0.50 0.65 0.016 0.020 0.026 C1 1.20 1.30 1.35 D 15.57 15.87 16.17 0.613 0.625 0.637 H1 6.70REF e 2.54BSC 0.264REF 0.1BSC L 12.68 12.98 13.28 0.499 0.511 0.523 L1 2.88 3.03 3.18 0.113 0.119 0.125 ØP 3.03 3.18 3.38 0.119 0.125 0.133 ØP3 3.15 3.45 3.65 0.124 0.136 0.144 F3 3.15 3.30 3.45 0.124 0.130 0.136 G3 1.25 1.35 1.55 0.049 0.053 0.061 b1 1.18 1.28 1.43 0.046 0.050 0.056 b2 0.70 0.80 0.95 0.028 0.031 0.037 TO-220MF Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.2,Sep-2019 Lonten LSD55R140GT ABYWW99 Part Number “99” Manufacturing Code 9 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Mechanical Dimensions for TO-263 COMMON DIMENSIONS SYMBOL MM INCH MIN NOM MAX MIN NOM MAX A 4.37 4.57 4.77 0.172 0.180 0.188 A1 1.22 1.27 1.42 0.048 0.050 0.056 A2 2.49 2.89 2.89 0.098 0.114 0.114 A3 0.00 0.13 0.25 0.000 0.005 0.010 b 0.70 0.81 0.96 0.028 0.032 0.034 b1 1.17 1.27 1.47 0.046 0.050 0.058 c 0.30 0.38 0.53 0.012 0.015 0.021 D1 8.50 8.70 8.90 0.335 0.343 0.350 D4 6.60 — — 0.260 — — E 9.86 10.16 10.36 0.389 0.400 0.408 E5 7.06 — — 0.278 — — e 2.54 BSC 0.100 BSC H 14.70 15.10 15.50 0.579 0.594 0.610 H2 1.07 1.27 1.47 0.042 0.050 0.058 L 2.00 2.30 2.60 0.079 0.091 0.102 L1 1.40 1.55 1.70 0.055 0.061 0.067 L4 θ 0.25 BSC 0° 5° 0.010 BSC 9° 0° 0.197° 0.354° TO-263 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.2,Sep-2019 Lonten LSE55R140GT ABYWW99 Part Number “99” Manufacturing Code 10 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Mechanical Dimensions for TO-262 TO-262 Part Marking Information Lonten Logo “AB” Foundry & Assembly Code “YWW” Date Code Version 2.2,Sep-2019 Lonten LSF55R140GT ABYWW99 Part Number “99” Manufacturing Code 11 www.lonten.cc LSB55R140GT/LSD55R140GT/LSE55R140GT/LSF55R140GT LonFET Disclaimer The content specified herein is for the purpose of introducing LONTEN's products (hereinafter "Products"). The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. Examples of application circuits, circuit constants and any other information contained herein illustrate the standard usage and operations of the Products. The peripheral conditions must be taken into account when designing circuits for mass production. LONTEN does not assume any liability for infringement of patents, copyrights, or other intellectual property rights of third parties by or arising from the use of the Products or technical information described in this document. The Products are not designed or manufactured to be used with any equipment, device or system which requires an extremely high level of reliability the failure or malfunction of which may result in a direct threat to human life or create a risk of human injury (such as a medical instrument, transportation equipment, aerospace machinery, nuclear-reactor controller, fuel-controller or other safety device). LONTEN shall bear no responsibility in any way for use of any of the Products for the above special purposes. Although LONTEN endeavors to improve the quality and reliability of its products, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate and malfunctions under certain use conditions. Please be sure to implement safety measures to guard them against the possibility of physical injury, and injury or damage caused by fire in the event of the failure of a LONTEN product. The content specified herein is subject to change for improvement without notice. When using a LONTEN product, be sure to obtain the latest specifications. Version 2.2,Sep-2019 12 www.lonten.cc