FH1607B

SHEN ZHEN XIN FEI HONG ELECTRONICS CO.,LTD FH1607B N-Channel Enhancement Mode MOSFET Features A pplications • • Switching application • Power Management for Inverter Systems. 68V/ 80A RDS(ON) = 6.8 mΩ (typ.) @ VGS=10V • 100% avalanche tested • R el i able and Rugged TO-263 ' * 6 Schematic diagram Marking and pin assignment To -263 Top View Absolute Maximum Ratings Parameter Symbol Rating Unit Common Ratings (TC=25°C Unless Otherwise Noted) V DSS Drain-Source Voltage 68 VGSS Gate-Source Voltage ±25 Maximum Junction Temperature 175 °C -55 to 175 °C 80 A TJ TSTG IS Storage Temperature Range Diode Continuous Forward Current T C =25°C V Mounted on Large Heat Sink IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation 320** T C=25°C 80 T C=100°C 66 T C=25°C 115 T C=100°C 57.7 RθJC Thermal Resistance-Junction to Case 1.3 RθJA Thermal Resistance-Junction to Ambient 62.5 A A W °C/W Avalanche Ratings EAS Avalanche Energy, Single Pulsed L=0.5mH 320*** mJ Note：* Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=55V www.xfhong.com 1/7 Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET Electrical Characteristics (T C = 25°C Unless Otherwise Noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit 68 - - V Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS V GS=0V, I DS =250µA V DS=68V, VGS =0V TJ =85°C Gate Threshold Voltage V DS=VGS, I DS=250µA Gate Leakage Current V GS=± 25V, V DS=0V RDS(ON)* Drain-Source On-state Resistance - - 1 µA - - 10 2 3 4 V ±100 nA - - V GS=10V, IDS =40A - 6.8 7.8 mΩ ISD =40A, VGS=0V - 0.8 1 V Diode Characteristics VSD * Diode Forward Voltage trr Reverse Recovery Time Q rr Reverse Recovery Charge - ISD =40A, dlSD/dt=100A/ µs 33 - ns - 61 - nC Ω Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz - 1.8 - Ciss Input Capacitance - 3203 - Coss Output Capacitance - 362 - C rss Reverse Transfer Capacitance VGS=0V, VDS =25V, Frequency=1.0MHz - 277 - t d(ON) Turn-on Delay Time - 15 - Tr Turn on Rise Time td(OFF) Turn-off Delay Time Tf - VDD= 34V, RG= 3 Ω, I DS=40A, VGS=10V, Turn-off Fall Time - 13 pF - - 20 - - 8 - - 84 - - 14 - - 30 - ns Gate Charge Characteristics Qg Total Gate Charge Qgs Gate- Source Charge Qgd Gate- Drain Charge VDS = 55V, VGS =10V, IDS=40A nC Note * : Pulse test ; pulse width ≤300µs, duty cycle≤2%. . www.xfhong.com 2/7 Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD V DS DUT RG 90% VGS VDD 10% VGS tp td(on) tr www.xfhong.com 3/7 td(off) tf Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics Power Dissipation Drain Current 210 ID - Drain Current (A) 90 Ptot - Power (W) 180 150 120 90 limited by package 80 70 60 50 40 30 60 20 30 10 o 0 TC=25 C 0 20 40 o 60 0 80 100 120 140 160 180 200 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 180 200 Tc - Case Temperature (°C) Tc - Case Temperature (°C) Safe Operation Area 100 100us Rd s(o n) Lim it ID - Drain Current (A) 600 1ms 10 10ms DC 1 o TC=25 C 0.1 0.01 0.1 1 10 100 500 VDS - Drain - Source Voltage (V) Thermal Transient Impedance Normalized Effective Transient 10 1 Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 0.01 0.001 0.0001 Mounted on minimum pad o RθJA : 62.5 C/W Single 0.001 0.1 0.01 1 10 Square Wave Pulse Duration (sec) www.xfhong.com 4/7 Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Output Characteristics Drain-Source On Resistance 8.0 160 140 6V RDS(ON) - On - Resistance (mΩ) VGS=7,8,9,10V ID - Drain Current (A) 120 5.5V 100 80 60 5V 40 20 4.5V 7.5 VGS =10V 7.0 6.5 6.0 5.5 0 0 2 4 6 8 10 0 12 20 40 ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 1.6 Normalized Threshold Vlotage RDS(ON) - On - Resistance (mΩ) 15 13 11 9 7 5 6 7 8 9 VGS - Gate - Source Voltage (V) www.xfhong.com 1.4 1.2 1.0 0.8 0.6 0.4 0.2 -50 -25 10 100 IDS =250µA IDS=40A 4 80 VDS - Drain-Source Voltage (V) 17 5 60 0 25 50 75 100 125 150 175 Tj - Junction Temperature (°C) 5/7 Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET Typical Operating Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 175 2.4 VGS = 10V 2.2 100 IDS = 40A 1.8 IS - Source Current (A) Normalized On Resistance 2.0 1.6 1.4 1.2 1.0 0.8 o Tj=175 C 10 o Tj=25 C 1 0.6 0.4 o 0.2 -50 -25 RON@Tj=25 C: 6.8mΩ 0 25 50 0.1 0.0 75 100 125 150 175 1.2 1.4 10 VDS= 55V 9 VGS - Gate-source Voltage (V) C - Capacitance (pF) 1.0 Gate Charge 4500 4000 Ciss 3500 3000 2500 2000 1500 1000 Coss Crss 5 IDS= 40A 8 7 6 5 4 3 2 1 10 15 20 25 30 35 0 40 VDS - Drain - Source Voltage (V) www.xfhong.com 0.8 Capacitance 5000 0 0.6 VSD - Source-Drain Voltage (V) Frequency=1MHz 0 0.4 Tj - Junction Temperature (°C) 5500 500 0.2 0 11 22 33 44 55 66 77 88 QG - Gate Charge (nC) 6/7 Ver1.0 FH1607B N-Channel Enhancement Mode MOSFET TO-263-2L Package Information Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A 4.470 4.670 0.176 0.184 A1 0.000 0.150 0.000 0.006 B 1.170 1.370 0.046 0.054 b 0.710 0.910 0.028 0.036 b1 1.170 1.370 0.046 0.054 c 0.310 0.530 0.012 0.021 c1 1.170 1.370 0.046 0.054 D 10.010 10.310 0.394 0.406 E 8.500 8.900 0.335 0.350 e 2.540 TYP. 0.100 TYP. e1 4.980 5.180 0.196 0.204 L 15.050 15.450 0.593 0.608 L1 5.080 5.480 0.200 0.216 L2 2.340 2.740 0.092 0.108 L3 1.300 1.700 0.051 0.067 V www.xfhong.com 5.600 REF 0.220 REF 7/7 Ver1.0