KNB2910B

KIA 130A，100V N-CHANNEL MOSFET 2910B SEMICONDUCTORS 1.Description KNX2910B, uses advanced trench technology to provide excellent RDS(ON), Low gate charge,It can be used in a wide variety of applications. 2. Features  VDS=100V,ID=130A RDS(ON)（typ.)=9.0mΩ @ VGS=10V  High density cell design for lower Rdson  Fully characterized avalanche voltage and current  Good stability and uniformity with high EAS  Excellent package for good heat dissipation 3. Applications  Power switching application  Hard switched and High frequency circuits  Uninterruptible power supply 4.Symbol 1 of 5 Pin Function 1 Gate 2 Drain 3 Source 4 Drain Rev 1.0.Apr. 2021 KIA 130A，100V N-CHANNEL MOSFET 2910B SEMICONDUCTORS 5. Ordering Information Part Number Package Brand KNB2910B TO-263 KIA KNP2910B TO-220 KIA 6. Absolute maximum ratings Symbo l Parameter Drain-source voltage Gate-source voltage Continuous drain curren Pulsed drain current (Note1) Single pulse avalanche energy(Note2) Derating Factor above 25ºC VDS VGS ID IDM EAS PD TJ, TSTG Operation junction and temperature range Rating Units 100 +20 130 520 650.25 211 V V A A mJ W/ºC -55 to175 ºC 7. Thermal characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case 2 of 5 Max 0.71 Unit ºC /W Rev 1.0.Apr. 2021 KIA 130A，100V N-CHANNEL MOSFET 2910B SEMICONDUCTORS 8. Electrical characteristics (TA=25°C,unless otherwise noted) Parameter Symbol Test Conditions Min Typ Max Units BVDSS VGS=0V,ID=250μA 100 - - V - - 1 μA Off Characteristics Drain-source breakdown voltage VDS=80V, VGS=0V Drain-Source Leakage Current IDSS Gate-Soure Forward Leakage IGSS(F) VGS=+20V - - 100 nA Gate-Soure Reverse Leakage IGSS(R) VGS=-20V - - -100 nA Drain-source on-Resistance(Note3) RDS(on) VGS=10V,ID=35A - 9.0 11 mΩ Gate threshold voltage VGS(th) VDS=VGS, ID=250μA 2.0 2.8 4.0 V gfs VDS=5V,ID=20A - 95 - S - 160 - - 31 - - 50 - - 24 - - 22 - - 92 - tf - 42 - Input capacitance Ciss - 7950 - Output capacitance Coss - 460 - Reverse transfer capacitance Crss - 380 - - - 1.3 On Characteristics Forward Transconductance Dynamic Characteristics Total gate charge Qg Gate-source charge Qgs Gate-drain charge Qgd Turn-on delay time td(on) Rise time Turn-off delay time Fall time VDD=30V, VGS=10V ID =30A VDD=30V, ID=40A, RGEN=3Ω, VGS=10V, tr td(off) nC ns Switching Characteristics (Note 4) VDS=25V,VGS=0V, f=1MHz pF Drain-Source Diode Characteristics Diode Forward voltage VSD VGS=0V,IS=20A Note 1. Repetitive Rating: Pulse width limited by maximum junction temperature. 2. EAS condition :T j=25℃,VDD=50V,VG=10V,L=0.5mH,Rg=1Ω 3. Pulse Test: Pulse Width ≤ 300μs, Duty Cycle ≤ 2%. 4. Guaranteed by design, not subject to production. 3 of 5 Rev 1.0.Apr. 2021 V KIA 130A，100V N-CHANNEL MOSFET 2910B SEMICONDUCTORS 9. Test circuits 4 of 5 Rev 1.0.Apr. 2021 KIA 130A，100V N-CHANNEL MOSFET 2910B SEMICONDUCTORS 5 of 5 Rev 1.0.Apr. 2021