PTY80N06

PTP80N60/PTY80N60 60V/80A N-Chnnel MOSFET Features  D 60V/80A RDS(ON)=7.3mŸ @ VGS=10V ◀  Lead free and Green Device Available  Low Rds-on to Minimize Conductive Loss  High avalanche Current  100% Avalanche Tested G S D Application  Power Supply  DC-DC Converters  UPS  Battery Manageme ent System G TO-220 S TO-263 Absolute Maximum Ratings (TA=25°C unless otherwise noted) Symbol S VDSS VGSS ID3 IDP4 EAS5 PD TJ, TSTG Parame eter D Drain-to-Source Voltag ge G Gate-to-Sou urce Voltage e C Continuous Drain Curre ent P Pulsed Drain Current A Avalanche energy e M Maximum Power P Dissip pation JJunction & Storage S Tem mperature R Range TC=25°C C TC=100°°C TC=25°C C TC=25°C C Maximum m Unitt 60 ±25 80 66 320 242 125 -55~175 V V mJ W °C Typical Unit 1.0 62.5 ℃/W A Thermal Characteristics Symbol Rθ jc Rθja Parameter Thermal Resistance-Junction to Case Thermal Resistance-Junction to Ambient - 1- 2018-6-12 PTP80N60/PTY80N60 60V/80A N-Chnnel MOSFET Electrical Characteristics (TA=25°C unless otherwise noted) Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS VGS(th) Zero Gate Voltage Drain Current Gate Threshold Voltage IGSS RDS(on)1 Gate Leakage Current Drain-Source On-Resistance Test Conditions Min. Typ Max. Unit VGS=0V,ID=250uA VDS=60V,VGS=0V 60 — — — — 1 VDS=VGS,ID=250uA 2 3 4 VGS=±25V, VDS=0V VGS=10V, ID=40A — — — — 7.3 — ISD=40A, — — — — — — 70 100 1.3 — — — — — — — 3970 365 257 57 63 139 50 — — — — — — — — — — 91 19 30 — V uA V ±100 8 — nA mΩ Diode Characteristics VSD1 IS3 trr Qrr Diode Forward Voltage Diode Continuous Forward Current Reverse Recovery Time Reverse Recovery Charge Dynamic Characteristics2 Ciss Input Capacitance Output Capacitance Coss Reverse Transfer Capacitance Crss td(on) Turn-On Delay Time Rise Time tr Turn-Off Delay Time td(off) Fall Time tf Gate Charge Characteristics2 Qg Total Gate Charge Gate-to-Source Charge Qgs Qgd Gate-to-Drain Charge GS=0V IS=40A, dI/dt=100A/us VGS=0V, VDS=25V Frequency=1MHz VDD=34V,ID =40A, VGS=10V,(Note1,4) VDD=48V,ID =40A, VGS=10V,(Note1,4) 100 — — — — V A nS nC pF nS nC Note: 1: Pulse test; pulse width ≦ 300us, duty cycle ≦ 2%. 2: Guaranteed by design, not subject to production testing. 3: Package limitation current is 100A.Calculated continuous current based on maximum allowable junction temperature. 4: Repetitive rating, pulse width limited by max junction temperature. 5: Starting TJ = 25°C,L = 1mH,IAS = 22A. - 2- 2018-6-12 PTP80N60/PTY80N60 60V/80A N-Chnnel MOSFET ID- Drain Current (A) Normalized On-Resistance Typical Operating Characteristics TJ-Junction Temperature(℃) Vds Drain-Source Voltage (V) Figure 4 Rdson-JunctionTemperature ID- Drain Current (A) Vgs Gate-Source Voltage (V) Figure 1 Output Characteristics Qg Gate Charge (nC) Figure 2 Transfer Characteristics Figure 5 Gate Charge Is- Reverse Drain Current (A) Rdson On-Resistance(mΩ) Vgs Gate-Source Voltage (V) ID- Drain Current (A) Vsd Source-Drain Voltage (V) Figure 3 Rdson- Drain Current Figure 6 Source- Drain Diode Forward - 3- 2018-6-12 PTP80N60/PTY80N60 60V/80A N-Chnnel MOSFET Test Circuit 1) EAS test Circuit 2) Gate charge test Circuit 3) Switch Time Test Circuit - 4- 2018-6-12